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Influence Of Growth Conditions On The Thermal Quenching Of Photoluminescence From Sige/Si Quantum Structures

Published online by Cambridge University Press:  10 February 2011

I. A. Buyanova ,
W. M. Chen ,
W.-X. Ni ,
G. V. Hansson  and
B. Monemar
I. A. Buyanova
Affiliation:
Dept of Physics and Measurement Technology, Linköping University, S-581 83 Linkoping, Sweden
W. M. Chen
Affiliation:
Dept of Physics and Measurement Technology, Linköping University, S-581 83 Linkoping, Sweden
W.-X. Ni
Affiliation:
Dept of Physics and Measurement Technology, Linköping University, S-581 83 Linkoping, Sweden
G. V. Hansson
Affiliation:
Dept of Physics and Measurement Technology, Linköping University, S-581 83 Linkoping, Sweden
B. Monemar
Affiliation:
Dept of Physics and Measurement Technology, Linköping University, S-581 83 Linkoping, Sweden
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Abstract

In this work we study effects of growth temperature and use of surfactant during growth on thermal quenching of photoluminescence (PL) from SiGe/Si quantum wells (QWs) grown by molecular beam epitaxy (MBE). We show that although all investigated structures demonstrate intense and sharp excitonic emissions from the SiGe QWs at liquid helium temperature, thermal quenching of this PL critically depends on the growth conditions. In particular, the use of low (⁤ 550°C) growth temperatures or employing Sb as a surfactant during high temperature (620°C) growth considerably degrades the PL thermal quenching behaviour by introducing some competing quenching processes with low activation energies of about 5 meV. The optimum growth conditions judging from the PL thermal behaviour are realised during high temperature growth without surfactant (620°C). Even higher growth temperature is shown to be required during surfactant mediated growth to improve the thermal quenching behaviour. From optically detected magnetic resonance (ODMR) studies, the competing quenching processes are attributed to a thermal activation of non-radiative defects introduced during either low-temperature MBE growth or during surfactant-mediated growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 295
Copyright
Copyright © Materials Research Society 1998

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