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The Influence of the Hot Wire Temperature on the Crystallization of μc-Si:H Films Prepared by Hot Wire-Assisted-ECR-CVD

Published online by Cambridge University Press:  01 February 2011

Ying Li ,
Zhi zhong Li ,
Guang hua Chen  and
Minoru Kumeda
Ying Li
Affiliation:
liying@ec.t.kanazawa-u.ac.jp, Kanazawa University, Graduate School of Natural Science and Technology, Kakuma-machi, Kanazawa, Ishikawa, 920-1192, Japan, 81-76-234-4881, 81-76-234-4870
Zhi zhong Li
Affiliation:
r.lee@eyou.com, Beijing University of Technology, Materials Science and Engineering, Beijing, 100022, China, People's Republic of
Guang hua Chen
Affiliation:
ghchen@bjut.edu.cn, Beijing University of Technology, Materials Science and Engineering, Beijing, 100022, China, People's Republic of
Minoru Kumeda
Affiliation:
kumeda@t.kanazawa-u.ac.jp, Kanazawa University, Graduate School of Natural Science and Technology, Kakuma-machi, Kanazawa, Ishikawa, 920-1192, Japan
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Abstract

We have constructed a hot wire assisted ECR-CVD system to prepare a-Si:H and μc-Si:H films. The effect of hot wire temperature on crystallization of a-Si:H films is studied in the films prepared by these system. The crystalline fraction and crystalline grain size are analyzed by Raman scattering. The hydrogen content and the bonding scheme of hydrogen were measured by Fourier transform infrared (FTIR) spectroscopy. At low hot wire temperature, about 20 at.% hydrogen is included in the film. With increasing the hot wire temperature, the total content of the hydrogen, SiH2 and SiH decrease and the microcrystalline phase appears. It is found from the ratio of the crystalline TO peak to the total area of the TO peak of the Raman scattering spectra that the volume fraction of the crystalline phase increases with increasing the hot wire temperature. The crystalline peak has a tendency to shift toward the higher wavenumber with increasing the hot wire temperature, suggesting that the grain size increases with increasing the hot wire temperature.

Keywords

amorphouscrystallinehydrogenation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A08-04
Copyright
Copyright © Materials Research Society 2006

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