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In-Situ Photoexcitation-Induced Suppression of Point Defect Generation in Ion Implanted Silicon

Published online by Cambridge University Press:  10 February 2011

C. R. Cho ,
N. Yarykin ,
G. A. Rozgonyi  and
R. A. Zuhr
C. R. Cho
Affiliation:
North Carolina State University, Raleigh NC 27695-7916
N. Yarykin
Affiliation:
North Carolina State University, Raleigh NC 27695-7916
G. A. Rozgonyi
Affiliation:
North Carolina State University, Raleigh NC 27695-7916
R. A. Zuhr
Affiliation:
Oak Ridge National Laboratory, Oak Ridge TN37831
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Abstract

The formation of vacancy-related defects in n-type silicon has been studied immediately after implantation of He, Si, or Ge ions at 85 K using in-situ DLTS. A-center concentrations in He-implanted samples reach a maximum immediately after implantation, whereas, with Si or Ge ion implanted samples they continuously increase during subsequent anneals. It is proposed that defect clusters, which emit vacancies during anneals, are generated in the collision cascades of Si or Ge ions. An illumination-induced suppression of A-center formation is seen immediately after implantation of He ions at 85 K. This effect is also observed with Si or Ge ions, but only after annealing. The suppression of vacancy complex formation via photoexcitation is believed to occur due to an enhanced recombination of defects during ion implantation, and results in reduced number of vacancies remaining in the defect clusters. In p-type silicon, a reduction in K-center formation and an enhanced migration of defects are concurrently observed in the illuminated sample implanted with Si ions. These observations are consistent with a model where the injection of excess carriers modifies the defect charge state and impacts their diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 187
Copyright
Copyright © Materials Research Society 1999

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References

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