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Investigation of molecular co-doping for low ionization energy p-type centers in (Ga,Al)N

Published online by Cambridge University Press:  01 February 2011

Zhe Chuan Feng ,
Adam M. Payne ,
David Nicol ,
Paul D. Helm ,
Ian Ferguson ,
Jayantha Senawiratne ,
Martin Strassburg ,
Nikolaus Dietz ,
Axel Hoffmann  and
Christoph Hums
Zhe Chuan Feng
Affiliation:
Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0250.
Adam M. Payne
Affiliation:
Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0250.
David Nicol
Affiliation:
Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0250.
Paul D. Helm
Affiliation:
Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0250.
Ian Ferguson
Affiliation:
Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0250.
Jayantha Senawiratne
Affiliation:
Department of Physics and Astronomy, Georgia State University, Atlanta, GA, 30303, USA.
Martin Strassburg
Affiliation:
Department of Physics and Astronomy, Georgia State University, Atlanta, GA, 30303, USA.
Nikolaus Dietz
Affiliation:
Department of Physics and Astronomy, Georgia State University, Atlanta, GA, 30303, USA.
Axel Hoffmann
Affiliation:
Institute of Solid State Physics, Technical University of Berlin, 10623 Berlin, Germany.
Christoph Hums
Affiliation:
Institute of Solid State Physics, Technical University of Berlin, 10623 Berlin, Germany.
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Abstract

This work initiates an investigation of molecular co-doping to produce p-type centers in (Ga,Al)N with ionization energies lower than Mg. Dopant complexes can be formed between a doubly ionized acceptor such as (Cu, Li or Ag) and a singly ionized donor (silicon). Ion implantation of Cu, Li and Ag into silicon doped GaN films grown by Metalorganic Chemical Vapor Deposition (MOCVD) has been performed. Secondary ion mass spectroscopy (SIMS) data confirmed the simulated depth profile. High resolution X-ray diffraction and Raman spectroscopy were used to characterize the crystalline damage and subsequent recovery upon anneal. A complete recovery was observed after high temperature (700–900°C) annealing. Low temperature (6K) photoluminescence (PL) for Cu-implanted GaN showed bands identified with crystalline lattice damage due to the Cu-implantation. The annealed samples showed recovery of standard crystalline GaN features. Additional donor-acceptor pair features are observed below 3.35 eV indicating the existence of an acceptor state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.44
Copyright
Copyright © Materials Research Society 2004

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References

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