Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-06-14T08:07:30.369Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of Sidewall Recombination in GaN Using a Quantum Well Probe

Published online by Cambridge University Press:  17 March 2011

E. D. Haberer ,
M. Woods ,
A. Stonas ,
C-H. Chen ,
S. Keller ,
M. Hansen ,
U. Mishra ,
S. Denbaars ,
J. Bowers  and
E. L. Hu
E. D. Haberer
Affiliation:
Materials Department, University of California, Santa Barbara, California, 93106
M. Woods
Affiliation:
Materials Department, University of California, Santa Barbara, California, 93106
A. Stonas
Affiliation:
Materials Department, University of California, Santa Barbara, California, 93106
C-H. Chen
Affiliation:
Dept. of Elect. and Comp. Eng., University of California, Santa Barbara, California, 93106
S. Keller
Affiliation:
Dept. of Elect. and Comp. Eng., University of California, Santa Barbara, California, 93106
M. Hansen
Affiliation:
Dept. of Elect. and Comp. Eng., University of California, Santa Barbara, California, 93106
U. Mishra
Affiliation:
Dept. of Elect. and Comp. Eng., University of California, Santa Barbara, California, 93106
S. Denbaars
Affiliation:
Dept. of Elect. and Comp. Eng., University of California, Santa Barbara, California, 93106
J. Bowers
Affiliation:
Dept. of Elect. and Comp. Eng., University of California, Santa Barbara, California, 93106
E. L. Hu
Affiliation:
Dept. of Elect. and Comp. Eng., University of California, Santa Barbara, California, 93106
Get access

Abstract

In this study, we use a quantum well (QW) probe structure to explore the size dependent effects of sidewall recombination in GaN. Mesas 0.8-7 μm in width with pitches of 4 μm, 8 μm, and 12 μm were etched into the QW probe structure, exposing the QW at the sidewalls. Several etch conditions were investigated. Room temperature photoluminescence (PL) measurements, using a He-Cd laser as an excitation source and laser spot size of approximately 230 μm, were taken before and after the mesas were etched. The effects of sidewall formation were quantified by comparing the maximum PL intensity of the QW before and after etch. Higher remaining PL intensity was observed for etch conditions which used both Ar ions and Cl2 gas instead of only Ar ions. The fraction of remaining PL decreased with decreasing mesa width, however the remaining PL intensity was relatively large even for small features. The preliminary data suggested that GaN is relatively insensitive to sidewall damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.21
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Coldren, L. A. and Corzine, S. W., Diode Lasers and Photonic Integrated Circuits, (John Wiley and Sons, Inc., New York, 1995), pp. 148–153.Google Scholar
2. Murad, S., Rahman, M., Johnson, N., Thoms, S., Beaumont, S. P., and Wilkinson, C. D. W., J. Vac. Sci. Technol. B 14, 3658 (1996).Google Scholar
3. Berg, E. W. and Pang, S. W., J. Vac. Sci. Technol. B 16, 3359 (1998).Google Scholar