Hostname: page-component-848d4c4894-p2v8j Total loading time: 0.001 Render date: 2024-06-05T06:20:27.223Z Has data issue: false hasContentIssue false
  • English
  • Français

Key Technologies for FeRAM Backend Module

Published online by Cambridge University Press:  31 January 2011

Tian-Ling Ren ,
Ming-Ming Zhang ,
Ze Jia ,
Lin-Kai Wang ,
Chao-Gang Wei ,
Kan-Hao Xue ,
Ying-Jie Zhang ,
Hong Hu ,
Dan Xie  and
Li-Tian Liu
Tian-Ling Ren
Affiliation:
rentl@mail.tsinghua.edu.cn, Institute of Microelectronics, Tsinghua University, Beijing, China
Ming-Ming Zhang
Affiliation:
zhangmm06@mails.tsinghua.edu.cn, Institute of Microelectronics, Tsinghua University, Beijing, China
Ze Jia
Affiliation:
jiaze@tsinghua.edu.cn, Institute of Microelectronics, Tsinghua University, Beijing, China
Lin-Kai Wang
Affiliation:
wlk04@mails.tsinghua.edu.cn, Institute of Microelectronics, Tsinghua University, Beijing, China
Chao-Gang Wei
Affiliation:
kevin02@tom.com, Institute of Microelectronics, Tsinghua University, Beijing, China
Kan-Hao Xue
Affiliation:
xuekanhao@gmail.com, Institute of Microelectronics, Tsinghua University, Beijing, China
Ying-Jie Zhang
Affiliation:
zhang-yj02@mails.tsinghua.edu.cn, Institute of Microelectronics, Tsinghua University, Beijing, China
Hong Hu
Affiliation:
zhangmm06@gmail.com, Institute of Microelectronics, Tsinghua University, Beijing, China
Dan Xie
Affiliation:
xiedan@tsinghua.edu.cn, Institute of Microelectronics, Tsinghua University, Beijing, China
Li-Tian Liu
Affiliation:
liulitian@mail.tsinghua.edu.cn, Institute of Microelectronics, Tsinghua University, Beijing, China
Get access

Abstract

Ferroelectric random access memory (FeRAM) is believed to be the most promising candidate for the next generation non-volatile memory due to its fast access time and low power consumption. Fabrication technologies of FeRAM can be divided into two parts: CMOS technologies for circuits which are standard and can be shared with traditional IC process line, and process relating to ferroelectric which is separated with CMOS process and defined as backend module. This paper described technologies for integrating ferroelectric capacitors into standard CMOS, mainly about modeling of ferroelectric capacitors and backend fabrication technologies. Hysteresis loop of the ferroelectric capacitor is the basis for FeRAM to store data. Models to describe this characteristic are the key for the design of FeRAM. A transient behavioral ferroelectric capacitor model based on C-V relation for circuit simulation is developed. The arc tangent function is used to describe the hysteresis loop. “Negative capacitance” phenomenon at reversing points of applied voltage is analyzed and introduced to the model to describe transient behaviors of the capacitor. Compact equivalent circuits are introduced to integrate this model into HSPICE for circuit simulation. Ferroelectric materials fabrication, electrodes integration and etching are the main technologies of FeRAM fabrication process. An metal organic chemical vapor deposition (MOCVD) process is developed to fabricate high quality Pb(Zr1-xTix)O3 (PZT) films. Pt is known to cause the fatigue problems when used as electrodes with PZT. Ir is used as electrodes to improve the fatigue property of PZT based capacitors, and mechanism of the fatigue is analyzed. Hard mask is used to reduce the size of the capacitors and damage caused in etching process. In our process, Al2O3 is developed as hard mask, which simplifies the FeRAM backend integration process.

Keywords

ferroelectricmemoryfatigue
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1160: Symposium H – Materials and Physics for Nonvolatile Memories , 2009 , 1160-H08-01
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Moore, G.E., Proceedings of the IEEE. 86, 82 (1998).Google Scholar
[2] http://www.intel.com/pressroom/archive/releases/20090210corp.htmGoogle Scholar
[3] Bez, R., Camerlenghi, E., Modelli, A. and Visconti, A., Proceedings of the IEEE. 91, 489 (2003).Google Scholar
[4] Scott, J.F. and Araujo, C.A., Science. 246, 1400 (1989).Google Scholar
[5] Lai, S., IEDM. 2003, 255.Google Scholar
[6] Bette, A., Debrosse, J., Gopl, D., Hoeniqschmid, H., Robertazzi, R. and Arndt, C. et al., VLSI Circuits 2003, 217.Google Scholar
[7] Chen, A., Haddad, S., Wu, Y.C., Fang, T.N., Lan, Z.D. and et, S. Acanzino al., IEDM 2005, 746.Google Scholar
[8] McAdams, H., Acklin, R., Blake, T., Fong, J., Liu, D. and Madan, S. et al., VLSI Circuits 2003, 175.Google Scholar
[9] Sheikholeslami, A. and Gulak, P. G., IEEE Trans. Untrason. Ferroelect. Freq. control. 44, 917 (1997).Google Scholar
[10] Park, B.H., Kang, B.S., Bu, S.D., Noh, T.W., Lee, J. and Jo, W., Nature. 401, 682 (1999).Google Scholar
[11] Dey, S.K., Payne, D.A., and Budd, K.D., IEEE Trans. Untrason. Ferroelect. Freq. control. 35, 80 (1988).Google Scholar
[12] and, K.N. Kim Song, Y.J., Microelectron. Reliab. 43, 385 (2003).Google Scholar
[13] Kobayashi, S., Amanuma, K. and Hada, H., IEEE Electron. Dev. Lett. 19, 417 (1998).Google Scholar
[14] Lee, J.K., Lee, M.S., Hong, S., Lee, W., Lee, Y.K., Shin, S. and Park, Y.S., Jpn. J. Appl. Phys. 41 6690 (2002).Google Scholar
[15] Angadi, M., Auciello, O., Krauss, A.R. and Gundel, H.W., Appl. Phys. Lett. 77, 2659 (2000).Google Scholar
[16] Chen, Y. and Mclntyre, P.C., Appl. Phys. Lett. 91, 232906 (2007).Google Scholar
[17] Nakamura, T., Nakao, Y., Kamisawa, A. and Takasu, H., Appl. Phys. Lett. 77, 1522 (1994).Google Scholar
[18] Kim, K.N. and Lee, S.Y., J. Appl. Phys., 100, 051604 (2006).Google Scholar
[19] Aoki, K., Fukuda, Y., Numata, K. and Akitoshi, N., Jpn. J. Appl. Phys. 35, 2210 (1996).Google Scholar
[20] Kim, K. N. and Song, Y.J., Microelectron. Reliab. 43, 385 (2003).Google Scholar
[21] Song, Y.J., Kim, H.H., Lee, S.Y., Jung, D.J., Koo, B.J. and Lee, J.K., Appl. Phys. Lett. 76, 451 (2000).Google Scholar
[22] Gerson, R. and Jaffe, H., J. Phys. Chem. Solids. 24, 979 (1963).Google Scholar
[23] Madhukar, S., Aggarwal, S., Dhote, A.M., Ramesh, R., Krishnan, A. and Keeble, D., J. Appl. Phys. 81, 3543 (1997).Google Scholar
[24] Pinnow, C.U., Kasko, I., Dehm, C., Jobst, B., Seibt, M. and Geyer, U., J. Vac. Sci. Tech. B 19, 1857 (2001).Google Scholar
[25] Marks, S., Almerico, J.P., Gay, M.K. and Celii, F.G., Integr. Ferroelect. 59, 333 (2003).Google Scholar
[26] and, S.Y. Lee Kim, K., IEDM 2002, 547.Google Scholar