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Laser Assisted Molecular Beam Deposition of Si, C and Sic Films

Published online by Cambridge University Press:  10 February 2011

R. L. DeLeon ,
L. Sun ,
E. Rexer ,
J. Charlebois ,
J. F. Garvey ,
E. W. Forsythe  and
G. S. Tompa
R. L. DeLeon
Affiliation:
Department of Chemistry, State University of New York at Buffalo, Buffalo, NY 14260
L. Sun
Affiliation:
Department of Chemistry, State University of New York at Buffalo, Buffalo, NY 14260
E. Rexer
Affiliation:
Department of Chemistry, State University of New York at Buffalo, Buffalo, NY 14260
J. Charlebois
Affiliation:
Department of Chemistry, State University of New York at Buffalo, Buffalo, NY 14260
J. F. Garvey
Affiliation:
Department of Chemistry, State University of New York at Buffalo, Buffalo, NY 14260
E. W. Forsythe
Affiliation:
Structured Materials Industries, Inc., 120 Centennial Ave., Piscataway, NJ 08854
G. S. Tompa
Affiliation:
Department of Chemistry, State University of New York at Buffalo, Buffalo, NY 14260
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Abstract

Laser Assisted Molecular Beam Deposition (LAMBD) utilizes a train of gas pulses to precisely control the flux of species generated by laser ablation. We have used the LAMBD technique to ablate Si, C or SiC and grow films on a variety of substrates. These films were deposited as a function of a variety of source growth parameters. Source emission spectra of the Si ablation showed atomic Si and Si+; C ablation showed C atoms. Flux control was implemented by a variation of the laser pulse energy. Flux rates were determined by ablation target mass differences. The films have been analyzed by Raman scattering, SEM, EDX, FTIR, ESCA and surface profile measurements to determine the film structure and composition. These results demonstrate the potential of using LAMBD sources as a means of depositing a variety of high quality single and multiple component films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 573
Copyright
Copyright © Materials Research Society 1997

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