Hostname: page-component-848d4c4894-nr4z6 Total loading time: 0 Render date: 2024-06-13T02:42:01.491Z Has data issue: false hasContentIssue false
  • English
  • Français

Long-Wavelength Vertical-Cavity Surface-Emitting Laser Diodes

Published online by Cambridge University Press:  10 February 2011

D.I. Babic ,
V. Jayaraman ,
N. M. Margalit ,
K. Streubel ,
M.E. Heimbuch ,
R.P. Mirin ,
B.J. Thibeault ,
J.E. Bowers ,
E.L. Hu  and
S. Denbaars
D.I. Babic
Affiliation:
Currently at Hewlett Packard Laboratories Palo Alto, CA
V. Jayaraman
Affiliation:
Optical Concepts, Lompoc, CA 93436
N. M. Margalit
Affiliation:
Department of Electrical and Computer Engineering University of California at Santa Barbara Santa Barbara, CA 93106
K. Streubel
Affiliation:
Royal Institute of Technology, Stockholm, Sweden
M.E. Heimbuch
Affiliation:
Department of Electrical and Computer Engineering University of California at Santa Barbara Santa Barbara, CA 93106
R.P. Mirin
Affiliation:
Department of Electrical and Computer Engineering University of California at Santa Barbara Santa Barbara, CA 93106
B.J. Thibeault
Affiliation:
Department of Electrical and Computer Engineering University of California at Santa Barbara Santa Barbara, CA 93106
J.E. Bowers
Affiliation:
Department of Electrical and Computer Engineering University of California at Santa Barbara Santa Barbara, CA 93106
E.L. Hu
Affiliation:
Department of Electrical and Computer Engineering University of California at Santa Barbara Santa Barbara, CA 93106
S. Denbaars
Affiliation:
Department of Electrical and Computer Engineering University of California at Santa Barbara Santa Barbara, CA 93106
Get access

Abstract

Long-wavelength (1300/1550 nm) vertical-cavity surface-emitting lasers (VCSELs) have been much more difficult to realize than VCSELs at shorter wavelengths such as 850/980 nm. The primary reason for this has been the low refractive index difference and reflectivity associated with lattice-matched InP/InGaAsP mirrors. A solution to this problem is to “wafer-fuse” high-reflectivity GaAs/AlGaAs mirrors to InP/InGaAsP active regions. This process has led to the first room-temperature continuous-wave (CW) 1.54 μm VCSELs. In this paper, we discuss two device geometries which employ wafer-fused mirrors, both of which lead to CW operation. We also discuss fabrication of WDM arrays using long-wavelength VCSELs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 63
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Morgan, R.A., Hibbs-Brenner, M.K., Walterson, R.A., Lehman, J.A. Marta, T.M., Bounnak, S., Kalweit, E.L., Akinwande, T., and Nohava, J.C., “Producible GaAs-based MOVPE-grown vertical-cavity top-surface emitting lasers with record performance,” Electron. Lett., 1995, 31, (6), pp. 462–464.Google Scholar
2. Geels, R.S., Corzine, S.W., and Coldren, L.A., “InGaAs vertical cavity surface-emitting lasers,” IEEE J. Quantum Electron., vol.27, no.6, pp. 1359–1367.Google Scholar
3. Lear, K., Choquette, K.D., Schneider, R.P., Kilcoyne, S.P., and Geib, K.M., “Selectively oxidized vertical-cavity surface-emitting lasers with 50% power conversion efficiency,” Electron. Lett., 1995, 31, (3), pp. 208–209.Google Scholar
4. Baba, T., Yogo, Y., Suzuki, K., Koyama, F., and Iga, K., “Near room-temperature continuous-wave lasing characteristics of GaInAsP/InP surface-emitting lasers,” Electron. Lett., 1993, 29, (10), pp. 913–914.Google Scholar
5. Babic, D.I., “Double-fused long-wavelength vertical-cavity lasers,” Ph.D. Dissertation, University of California, Santa Barbara, 1995.Google Scholar
6. Babic, D.I., Streubel, K. Mirin, R.P. Margalit, N.M., Bowers, J.E., Hu, E.L., Mars, D.E., Yang, L., and Carey, K.: “Room-temperature continuous-wave operation of 1.54 μm vertical-cavity lasers.,” IEEE Photon. Technol. Lett., 1995, 7, (11), pp. 1225–1227.Google Scholar
7. Blixt, P., Babic, D.I., Margalit, N.M., Reynolds, T.E., and Bowers, J.E., “1 Gbit/sec single-mode operation.of vertical-cavity lasers emitting at 1.54 μm,” Conference on Optical Fiber Communication, (OFC ‘96), paper TuC4, San Jose, CA Feb. 25-Mar. 1, 1996.Google Scholar
8. Margalit, N.M. Babic, D.I. Streubel, K. Mirin, R.P., Zhang, S. Mars, D.E., Bowers, J.E., and Hu, E.L., “Laterally oxidized long-wavelength CW vertical cavity lasers,” Conference on Optical Fiber Communication, (OFC ‘96) post-deadline session, San Jose, CA, Feb. 25-Mar. 1, 1996.Google Scholar
9. Jayaraman, V. and Kilcoyne, M.K. “WDM array using long-wavelength vertical-cavity lasers,” Photonics West SPIE conference, paper 2690–37, San Jose, CA Jan. 29-Feb. 2, 1996.Google Scholar