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Manipulation of Stresses in Metallic Thin Films by Alloying

Published online by Cambridge University Press:  21 February 2011

A. S. Nandedkar
A. S. Nandedkar*
Affiliation:
CASA Engineering,15 Dartantra Dr., Hopewell Junction, NY 12533, U. S. A.
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Abstract

Atomistic simulations were used to study the configurations of defects in copper aluminum alloy (2% copper, 98% aluminum). In the presence of free surface, the copper atoms migrated towards the surface. When the aluminum cell (about 2000 atoms) contained a dislocation, copper atoms segregated near the dislocation core on the compressional side. In presence of a grain boundary, copper atoms moved into the boundary plane. The segregation in these simulations resulted from reduction in localized strain near the structural defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 99
Copyright
Copyright © Materials Research Society 1995

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References

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