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MBE Growth and Characterization of II-VI Blue/Green Laser Diodes Having CW Operation at Room Temperature

Published online by Cambridge University Press:  22 February 2011

M.D. Ringle ,
D.C. Grillo ,
Y. Fan ,
L. He ,
J. Han ,
R.L. Gunshor ,
A. Salokatve ,
H. Jeon ,
M. Hovinen  and
A.V. Nurmikko
...Show all authors
M.D. Ringle
Affiliation:
School of Electrical Enginering, Purdue University, West Lafayette, IN 47907–1285
D.C. Grillo
Affiliation:
School of Electrical Enginering, Purdue University, West Lafayette, IN 47907–1285
Y. Fan
Affiliation:
School of Electrical Enginering, Purdue University, West Lafayette, IN 47907–1285
L. He
Affiliation:
School of Electrical Enginering, Purdue University, West Lafayette, IN 47907–1285
J. Han
Affiliation:
School of Electrical Enginering, Purdue University, West Lafayette, IN 47907–1285
R.L. Gunshor
Affiliation:
School of Electrical Enginering, Purdue University, West Lafayette, IN 47907–1285
A. Salokatve
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
H. Jeon
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
M. Hovinen
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
A.V. Nurmikko
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
G.C. Hua
Affiliation:
School of Electrical Enginering, Purdue University, West Lafayette, IN 47907–1285
N. Otsuka
Affiliation:
School of Materials Enginering, Purdue University and now permanently at Dept. of Materials Science, Japan Advanced Inst. of Sci. & Tech., Hokuriku 15 Asahidai, Tatsunokuchi-machi, Nomigun, Ishikawa 923-12, JAPAN
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Abstract

We have obtained continuous-wave laser operation at room temperature from a (Zn,Mg)(S,Se)-based Il-VI separate-confinement heterostructure where injection of holes into the p-type quaternary was achieved through the employment of a Zn(Se,Te) graded-bandgap contact. The laser devices exhibit threshold current densities of below 300 A/cm2 and voltages below 6 V. Issues related to the control of the growth of the quaternary (Zn,Mg)(S,Se) compound, and a proposal to further reducing the laser operating voltage will also be described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 431
Copyright
Copyright © Materials Research Society 1994

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References

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