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Methane Plasma Source Ion Implanted Ti-6Al-4V

Published online by Cambridge University Press:  21 February 2011

Jie Chen ,
J. R. Conrad ,
R. A. Dodd  and
F. J. Worzala
Jie Chen
Affiliation:
University of Wisconsin-Madison, Plasma Source Ion Implantation Program, Madison, WI 53706
J. R. Conrad
Affiliation:
University of Wisconsin-Madison, Plasma Source Ion Implantation Program, Madison, WI 53706
R. A. Dodd
Affiliation:
University of Wisconsin-Madison, Plasma Source Ion Implantation Program, Madison, WI 53706
F. J. Worzala
Affiliation:
University of Wisconsin-Madison, Plasma Source Ion Implantation Program, Madison, WI 53706
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Abstract

Ti-6Al-4V alloy test coupons were ion implanted using methane Plasma Source Ion Implanter at an energy of 30 KeV. Multi-energy ion implantation, carbon film deposition as well as ion beam mixing were involved in this process. The resulted carbon profile is flat-top near the surface which forms a TiC layer. The implanted layer has demonstrated high load capacity and long life time under pin on disk wear test condition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 190: Symposium M – Plasma Processing and Synthesis of Materials III , 1990 , 11
Copyright
Copyright © Materials Research Society 1991

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References

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