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Microstructure and Mechanical Properties of Nitrided Molybdenum Silicide Coatings

Published online by Cambridge University Press:  25 February 2011

J-P. Hirvonen ,
I. Suni ,
H. Kattelus ,
R. Lappalainen ,
P. Torri ,
H. Kung ,
T.R. Jervis  and
M. Nastasi
J-P. Hirvonen
Affiliation:
Technical Research Centre of Finland, FIN- 02151 Espoo, Finland
I. Suni
Affiliation:
Technical Research Centre of Finland, FIN- 02151 Espoo, Finland
H. Kattelus
Affiliation:
Technical Research Centre of Finland, FIN- 02151 Espoo, Finland
R. Lappalainen
Affiliation:
FIN-00014 University of Helsinki, Finland
P. Torri
Affiliation:
FIN-00014 University of Helsinki, Finland
H. Kung
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545, USA
T.R. Jervis
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545, USA
M. Nastasi
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545, USA
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Abstract

Mo-Si-N films with a high nitrogen concentration were produced by sputter-deposition in the presence of nitrogen plasma. The chemical composition was determined with Rutherford backscattering and nuclear reaction analysis. The ratio of Mo to Si was 1:2 in the coatings with a nitrogen concentration of 50 %. The microstructure of the as-deposited coatings on a silicon substrate was amorphous and no crystallization was found after annealing up to 1000 °C, although some relaxation was observed in X-ray diffraction. This was confirmed in highresolution transmission electron microscope examination. The hardness of the Mo-Si-N films was 18.8 GPa as determined with a nanoindenter. This is significantly higher than that of MoSi2 films, 11.2 GPa. The hardness of the Mo-Si-N films increased to 24.4 GPa after annealing at 800 °C, which is approximately the same as the hardness of the high-temperature tetragonal phase of MoSi2, 25.5 GPa. Similarly, the modulus of the as-deposited Mo-Si-N film was higher (257 GPa) than that of the MOSi2 film (222 GPa). However, only a slight increase in the modulus of the Mo-Si-N film was found after annealing at 800 °C, whereas the modulus of the crystallized tetragonal MoSi2 was 382 GPa. No cracking was found in the Mo-Si-N films even after annealing at 1000 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 322: Symposium F – High-Temperature Silicides and Refractory Alloys , 1993 , 279
Copyright
Copyright © Materials Research Society 1994

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