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Misfit dislocations in green-emitting InGaN/GaN quantum well structures

Published online by Cambridge University Press:  01 February 2011

Pedro MFJ Costa ,
Ranjan Datta ,
Menno J Kappers ,
Mary E Vickers  and
Colin J Humphreys
Pedro MFJ Costa
Affiliation:
pmfjc2@cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, Pembroke Street, Cambridge, N/A, CB2 3QZ, United Kingdom
Ranjan Datta
Affiliation:
rd280@cam.ac.uk, University of Cambridge, Department of Materials Science and Metallurgy, United Kingdom
Menno J Kappers
Affiliation:
mjk30@cam.ac.uk, University of Cambridge, Department of Materials Science and Metallurgy, United Kingdom
Mary E Vickers
Affiliation:
mev20@cam.ac.uk, University of Cambridge, Department of Materials Science and Metallurgy, United Kingdom
Colin J Humphreys
Affiliation:
colin.humphreys@msm.cam.ac.uk, University of Cambridge, Department of Materials Science and Metallurgy, United Kingdom
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Abstract

Misfit dislocations (MDs) have been observed using transmission electron microscopy (TEM) in InGaN/GaN quantum well (MQW) structures grown under different metal-organic vapour phase epitaxy (MOVPE) regimes and with In-contents equal to or higher than 20%. These dislocations are even observed in a single quantum well 3 nm thick with an In-content of 22%. Conversely, no MDs were observed in QW structures with an In-content of 16%. The presence of MDs in the QW stack leads to strain relaxation which has been confirmed in the indium-rich structures by high resolution X-ray diffraction (HRXRD).

Keywords

III-Vtransmission electron microscopy (TEM)dislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF25-01
Copyright
Copyright © Materials Research Society 2006

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References

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