Hostname: page-component-848d4c4894-x24gv Total loading time: 0 Render date: 2024-06-03T21:35:14.686Z Has data issue: false hasContentIssue false
  • English
  • Français

Morphology Change, Size Distribution, and Nano-sized Channels in Cu6Sn5 Intermetallic Compound Formation at the SnPb Solder and Copper Interface

Published online by Cambridge University Press:  01 February 2011

J. O. Suh ,
K. N. Tu  and
A. M. Gusak
J. O. Suh
Affiliation:
Department of Materials Science and Engineering, UCLA, Los Angeles, CA 90095-1595 Tel: 1-310-836-4028 Fax: 1-206-7353 E-mail: ejosuh@ucla.edu
K. N. Tu
Affiliation:
Department of Materials Science and Engineering, UCLA, Los Angeles, CA 90095-1595 Tel: 1-310-836-4028 Fax: 1-206-7353 E-mail: ejosuh@ucla.edu
A. M. Gusak
Affiliation:
Department of Theoretical physics, Cherkasy State University, Cherkasy, Ukraine
Get access

Abstract

The growth and size distribution of scallop-type Cu6Sn5 intermetallic compound (IMC) at the interface between molten SnPb solder and Cu was investigated, along with a systematic study of morphology change of Cu6Sn5 morphology change as a function of SnPb solder composition. When SnPb solder composition was changed from eutectic (63Sn37Pb) to about 40Sn60Pb, Cu6Sn5 with round scallop-type morphology was found. In other compositions, the Cu6Sn5 scallops showed faceted scallop-type morphology. This morphological change is due to variation of interfacial energy between Cu6Sn5 and solder with a change of solder composition. The growth rate of Cu6Sn5 layer was proportional to cube root of time, and size distribution was in good agreement with the Flux-Driven-Ripening (FDR) theory. The pre-exponent factor k obtained by the measurement was 2.10×10-14 cm3/sec. Based on the k value, the calculated channel width with was about 2 nm, which was in good agreement with experimental observation by transmission electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B10.3
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kim, H.K., Tu, K.N. and Totta, P.A., Appl. Phys. Lett. 68 (16), 2204 (1996)Google Scholar
2. Kim, H.K. and Tu, K.N., Appl. Phys. Lett. 67 (14), 2002 (1995)Google Scholar
3. Lifshitz, I.M. and Slyozov, V.V., J. Phys. Chem. Solids 19, 35 (1961)Google Scholar
4. Wagner, C., Elektrochem, Z. 65, 581 (1961)Google Scholar
5. Gusak, A.M. and Tu, K.N., Phys. Rev. B. 66 (11), 115403 (2002)Google Scholar
6. Tu, K.N., Gusak, A.M., and Li, M., J. Appl. Phys. 93(3), 1335 (2003)Google Scholar
7. Thwaites, C.J., Warwick, M.E., and Scott, B., in Metals Handbook, 9th ed, vol. 9, edited by ASM handbook committee (American Society for Metals, Metals Park, 1985) p. 416 Google Scholar
8. Miller, W.A. and Chadwick, G.A., Prc. Roy. Soc. A. 312, 257 (1969)Google Scholar
9. Tu, K.N., Lee, T.Y., Jang, J.W., Li, L., Frear, D. R., Zeng, K. and Kivilahti, J.K., J. Appl. Phys. 89 (9), 4843 (2001)Google Scholar
10. Cabrera, N., Surf. Sci. 2, 320 (1964)Google Scholar
11. Jackson, K.A., Prog. Solid State Chem. 4, 53, (1967)Google Scholar
12. Woodruff, D. P., The solid-liquid interface, (Cambridge University Press, London, 1973), p. 51 Google Scholar
13. Liu, C.Y. and Tu, K.N., J. Mat. Res. 13 (1), 37 (1998)Google Scholar
14. Görlich, J., Schmitz, G. and Tu, K.N., Appl. Phys. Lett. 86, 053106 (2005)Google Scholar