Hostname: page-component-848d4c4894-nr4z6 Total loading time: 0 Render date: 2024-06-03T10:13:22.068Z Has data issue: false hasContentIssue false

Multi-color luminescence from nanocrystalline silicon

Published online by Cambridge University Press:  01 February 2011

Hiroshi Kunii
Affiliation:
Department of Electronic and Computer Engineering, Tokyo Denki University, Ishizaka Hatoyama, Hikigun, Saitama, 350–0394, JAPAN
Keisuke Sato
Affiliation:
Department of Electronic and Computer Engineering, Tokyo Denki University, Ishizaka Hatoyama, Hikigun, Saitama, 350–0394, JAPAN
Kenji Hirakuri
Affiliation:
Department of Electronic and Computer Engineering, Tokyo Denki University, Ishizaka Hatoyama, Hikigun, Saitama, 350–0394, JAPAN
Tomio Izumi
Affiliation:
Department of Electronics, Tokai University 1117 Kitakaname, Hiratsuka, Kanagawa, 259–1292, Japan
Get access

Abstract

We have investigated correlation between luminescence property and particle size of nanocrystalline silicon (nc-Si) fabricated by controlling Si concentration in an amorphous SiOx (a-SiOx) films. The Si concentration in the a-SiOx film was increased with increasing a RF power and lowering a gas pressure. The increase of Si concentration led to expansion of the particle size of nc-Si. The particle size of nc-Si was varied from 1.8 nm up to 3.5 nm for the sample introduced the Si concentration from 0.7 % up to 9 %. The luminescent color from nc-Si grains, which differs in size, showed a red/green/blue lights.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sato, K., Hirakuri, K., Izumi, T., Iwase, M., Nanotech, J. (in press).Google Scholar
2. Mizuno, H. and Koshida, N., Mater. Res. Soc. Proc. 536, 179 (1999).Google Scholar
3. Gelloz, B., N. koshida, J. Appl. Phys. Lett. 88, 4319 (2000).Google Scholar
4. Tsybeskov, L., Vandyshev, J. V., and Fauchet, P. M., Phys. Rev. 49, 7821 (1994).Google Scholar
5. Sato, K., Sugiyama, Y., Izumi, T., Iwase, M., Show, Y., Morisaki, H., Yaguchi, T. and kamino, T., Appl. Surf. Sci. 216, 376 (2003).Google Scholar
6. Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
7. Rochet, F., Dufor, G., Roulet, H., Pelloie, B., Perrière, J., Fogarassy, E., Slaoui, A., Froment, M., Phys. Rev. B 37, 6468 (1988).Google Scholar