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Nanocavity Buffer Induced by Gas Ion Implantation in Silicon Substrate for Strain Relaxation of Heteroepitaxial Si1-xGex/Si Thin Layers

Published online by Cambridge University Press:  01 February 2011

Mahfoudh Raïssi ,
Gabrielle Regula ,
Chokri Hadj Belgacem ,
Cyril Coudreau ,
Serge Nitsche ,
Maryse Lancin ,
Bernhard Holländer ,
Florent Robert ,
Mustapha Fnaiech  and
Esidor Ntsoenzok
...Show all authors
Mahfoudh Raïssi
Affiliation:
mahfoudh@crmcn.univ-mrs.fr, Méditerranée and Paul Cézanne Universities, CRMC-N, UPR-CNRS 7251, Luminy Campus Case 913 Marseille 13 288, France
Gabrielle Regula
Affiliation:
gabrielle.regula@univ-cezanne.fr, Paul Cézanne University, Aix-Marseille III, TECSEN, UMR 6122, CNRS, Escadrille Normandie Niemen, case 262, Marseille, 13 397, France
Chokri Hadj Belgacem
Affiliation:
chokri_hadj@yahoo.fr, University of Monastir, URPS, Department of Physics, Avenue de l'Environnement, Monastir, 5 019, Tunisia
Cyril Coudreau
Affiliation:
coudreau@crmcn.univ-mrs.fr, Méditerranée and Paul Cézanne Universities, CRMC-N, UPR-CNRS 7251, Luminy Campus Case 913, Marseille, 13 288, France
Serge Nitsche
Affiliation:
nitsche@crmcn.univ-mrs.fr, Méditerranée and Paul Cézanne Universities, CRMC-N, UPR-CNRS 7251, Luminy Campus Case 913, Marseille, 13 288, France
Maryse Lancin
Affiliation:
maryse.lancin@univ-cezanne.fr, Paul Cézanne University, Aix-Marseille III, TECSEN, UMR 6122, CNRS, Escadrille Normandie Niemen, case 262, Marseille, 13 397, France
Bernhard Holländer
Affiliation:
b.hollaender@fz-juelich.de, Forschungszentrum Jülich GmbH, Institute of Bio- and Nanosystems, Semiconductor Thin Films and Device, Ion Technology Division, Jülich, 52 425, Germany
Florent Robert
Affiliation:
frobert@univ-montp2.fr, Montpellier University, LAMMI, UMR CNRS 5072, CC15, Place E. Bataillon, Montpellier, 34 095, France
Mustapha Fnaiech
Affiliation:
fnaiech_mustapha@yahoo.fr, University of Monastir, URPS, Department of Physics, Avenue de l'Environnement, Monastir, 5 019, Tunisia
Esidor Ntsoenzok
Affiliation:
esidor@cnrs-orleans.fr, Orléans University, CERI-CNRS, 3A Rue de la Férollerie, Orléans, 45 071, France
Jean-Louis Lazzari
Affiliation:
lazzari@crmcn.univ-mrs.fr, Méditerranée and Paul Cézanne Universities, CRMC-N, UPR-CNRS 7251, Luminy Campus Case 913, Marseille, 13 288, France
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Abstract

To weight the importance of a nanocavity buffer in a SiGe deposition substrate, some P type (001) FZ Si wafers are implanted (A samples) or not (B samples) at room temperature with 5×1016 He+ cm–2 at 10keV. They are annealed at 700°C for one hour to form a nanocavity layer close to the Si surface. Then, the wafers are carefully chemically cleaned in a clean room to remove both organic and metallic impurities from the surface. They are coated either by 210 nm (A) or 430 nm (B) Si1−xGex (x=0.20±0.02) alloy grown at 575°C for 0.42 hour by low pressure chemical vapor deposition (LP-CVD) with a growth rate of 8 to 17 nm.mn−1. Both kinds of samples are studied by cross section transmission electron microscopy, X-rays diffraction, Rutherford backscattering, atomic force microscopy and etch pit counts. The association of these techniques demonstrates that the thin SiGe layer which is deposited on sample A is fully relaxed and that the threading dislocation density (estimated to hardly reach 4×103cm−2) is at least one order of magnitude lower than what is obtained so far using ion implantation assistance in SiGe layer growth on Silicon. The roughness of the SiGe surface is low enough to stand a further Si epitaxy. Nevertheless, the mechanism involved responsible for the threading dislocation annihilation and/or confinement is still unclear.

Keywords

ion-implantationchemical vapor deposition (CVD) (chemical reaction)x-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F11-08
Copyright
Copyright © Materials Research Society 2007

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