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Optical Channel Waveguides in AlGaAs Multiple Quantum Well Structures Formed by Focused Ion Beam Induced Compositional Mixing

Published online by Cambridge University Press:  25 February 2011

Mukesh Kumar
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 452210–0030
Gregory N. De Brabander
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 452210–0030
Peter Chen
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 452210–0030
Joseph T. Boyd
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 452210–0030
Andrew J. Steckl
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 452210–0030
Ahn Goo Choo
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, OH 45221–0011
Howard E. Jackson
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, OH 45221–0011
Robert D. Burnham
Affiliation:
Amoco Research Center, Naperville, Illinois 60566
Stephen C. Smith
Affiliation:
Amoco Research Center, Naperville, Illinois 60566
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Abstract

Optical channel waveguiding in AlGaAs multiple quantum well structures formed by compositional mixing implemented by focused ion beam (FIB) implantation is demonstrated. To achieve selective mixing, Si is FIB implanted with a dose of 5×1014 cm−2 followed by RTA at 950°C for 10 s. Raman microprobe spectra are used to characterize the lateral variation of mixing. Propagation loss in a channel waveguide is measured. Measurement of the waveguide mode field distribution allows for the determination of changes in refractive index due to mixing and an approximate mixing depth.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Ishida, K., Matsui, K., Fukunaga, T., Kobayashi, J., Morita, T., Miyauchi, E., and Nakashima, H., Appl. Phys. Lett. 51, 109 (1987).Google Scholar
2. Ishida, K., Takamori, T., Matsui, K., Fukunaga, T., Morita, T., Miyauchi, E., Hashimoto, H., and Nakashima, H., Jap. J. Appl. Phys. 25, L783 (1986).Google Scholar
3. Ishida, K., Miyauchi, E., Morita, T., Takamori, T., Fukunaga, T., Hashimoto, H., and Nakashima, H., Jap. J. Appl. Phys. 26, L285 (1987).Google Scholar
4. Wu, M. C., Boenke, M. M., Wang, S., Clark, W. M., Stevens, E. H., and Utlaut, M. W., Appl. Phys. Lett. 53, 265 (1988).Google Scholar
5. Julien, F., Swanson, P. D., Emanuel, M. A., Deppe, D. G., DeTemple, T. A., Coleman, J. J., and Holonyak, N. Jr, Appl. Phys. Lett. 50, 866 (1987).Google Scholar
6. Kapon, E., Stoffel, N. G., Dobisz, E. A., and Bhat, R., Appl. Phys. Lett. 52, 351 (1988).Google Scholar
7. Weiss, B. L., Wismayer, A. C., and Roberts, J., Electron. Lett. 25, 653 (1989).Google Scholar
8. Wolf, T., Shieh, C. L., Engelmann, R., Alavi, K., and Mantz, J., Appl Phys. Lett. 55, 1412 (1989).Google Scholar
9. Tang, T., Swanson, P., Herzinger, C., Miller, L. M., Cockerill, T. M., Bryan, R. P., DeTemple, T. A., and Coleman, J. J., Appl. Phys. Lett. 57, 741 (1990).Google Scholar
10. Suzuki, Y., Iwamura, H., and Mikami, O., IEEE Photon. Lett. 2, 818 (1990).Google Scholar
11. Suzuki, Y., Iwamura, H., Miyazawa, T., and Mikami, O., Appl. Phys. Lett. 57, 2745 (1990).Google Scholar
12. Kumar, M., Boyd, J. T., Jackson, H. E., and Weiss, B. L., IEEE J. of Quantum Electron. 28, 1678 (1992).Google Scholar
13. Ziegler, J. F., Biersack, J. P., and Littmark, U., Stopping and Range of Ions in Matter, Vol. I (Pergamon, New York, 1988).Google Scholar
14. Choo, A. G., Gupta, V., Jackson, H. E., Boyd, J. T., Steckl, A. J., Chen, P., Weiss, B. L., and Burnham, R. D., in Advanced IH-V Compound Semiconductor Growth, Processing, and Devices, edited by Pearton, S. J., Sadana, D. K., and Zavada, J. M., (Mater. Res. Soc. Proc. 240, 1992), p. 691695.Google Scholar
15. Abstreiter, G., Cardona, M., and Pinczuk, A., in Light Scattering in Solids IV, edited by Cardona, M. and Guntherodt, G. (Springer-Verlag, New York, 1984), p. 60.Google Scholar
16. Fukunaga, T., Ishida, K., Kuroda, T., Matsui, K, Narusawa, T., Morita, T., Miyauchi, E., Hashimoto, H., and Nakashima, H., in Extended Abstracts of the 11th International on GaAs and Related Compounds (Int. Phys. Conf. Ser. No. 79, Bristol and Boston, 1985), pp. 439444.Google Scholar
17. Lee, S. T., Braunstein, G., Fellinger, P., Kahen, K.B., Rajeswaran, G., Appl. Phys. Lett. 53, 2531 (1988).Google Scholar