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Organometallic Chemical Vapor Deposition of Copper from a New Organometallic Precursor

Published online by Cambridge University Press:  25 February 2011

Stephen M. Fine ,
Paul N. Dyer ,
John A. T. Norman ,
Beth A. Muratore  and
Robert L. Iampietro
Stephen M. Fine
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Boulevard, Allentown PA 18195 ©Air Products and Chemicals, Inc. 1990
Paul N. Dyer
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Boulevard, Allentown PA 18195 ©Air Products and Chemicals, Inc. 1990
John A. T. Norman
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Boulevard, Allentown PA 18195 ©Air Products and Chemicals, Inc. 1990
Beth A. Muratore
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Boulevard, Allentown PA 18195 ©Air Products and Chemicals, Inc. 1990
Robert L. Iampietro
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Boulevard, Allentown PA 18195 ©Air Products and Chemicals, Inc. 1990
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Abstract

Thin copper films have been grown on a variety of substrates using Cu(nona-F)2, (bis[4-(2,2,2-trifluoroethyl)imino-1,1,1,5,5,5-hexafluoro-2-pentanonato] copper(II)), a new volatile organometallic copper precursor, and the results are compared with those obtained using copper(II) betadiketonates. Copper films were grown in a cold wall reactor at reduced pressure at temperatures between 270°C and 350°C. For Cu(nona-F)2, films which are pure as determined by Auger electron spectroscopy and have a resistivity of 2.1 micro-ohm cm were deposited at temperatures above 270°C, 40°C lower than was possible using Cu(hfac)2. At low deposition temperatures, Cu(nona-F)2 shows some selectivity towards silicon oxide surfaces in preference to metals. The effects of CVD process parameters on the deposition rate and microstructure of the films were studied with a designed experiment and were statistically modeled. Deposition rates up to 70 nm/min were measured. The standard enthalpy of vaporization of Cu(nona-F)2 was found to be 9.6 kcal/mol.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 415
Copyright
Copyright © Materials Research Society 1991

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References

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