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Orientation-Dependence of Low Temperature Epitaxial Silicon Growth

Published online by Cambridge University Press:  17 March 2011

Thomas A. Wagner ,
Lars Oberbeck ,
Melanie Nerding ,
Horst P. Strunk  and
Ralf B. Bergmann
Thomas A. Wagner
Affiliation:
Institute of Physical Electronics, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
Lars Oberbeck
Affiliation:
Institute of Physical Electronics, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
Melanie Nerding
Affiliation:
Institute of Microcharacterisation, University of Erlangen, Cauerstr. 6, 91508 Erlangen, Germany
Horst P. Strunk
Affiliation:
Institute of Microcharacterisation, University of Erlangen, Cauerstr. 6, 91508 Erlangen, Germany
Ralf B. Bergmann
Affiliation:
Institute of Physical Electronics, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
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Abstract

Electronic properties of thin epitaxial silicon films deposited at temperatures below 650°C by means of ion-assisted deposition strongly depend on substrate orientation as well as on deposition temperature: In (100)-oriented epitaxial films we find a low density of structural defects, and the minority carrier diffusion length is only limited by the presence of point defects or point defect complexes. These investigations also show an improvement of the electronic quality with increasing deposition temperature. Epitaxy on non-(100)-oriented substrates results in a significantly higher density of structural defects. The electronic properties of films deposited on stable flat surfaces, such as (111)- and (113)-oriented substrates are inferior as compared to (100)-oriented films, but are still superior to those of films deposited on faceted surfaces, as shown by light beam induced current and electron back-scattering diffraction measurements of polycrystalline thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A22.3
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Gossmann, H.-J. and Feldman, L. C., Phys. Rev. B 32, 6 (1985).Google Scholar
2. Eaglesham, D. J., Applied Physics Reviews 77, 3597 (1995).Google Scholar
3. Oberbeck, L., Wagner, T. A., and Bergmann, R. B., Mat. Res. Soc. Symp. Proc. 609, A7.1.1 (2000).Google Scholar
4. Oberbeck, L. and Bergmann, R. B., J. Appl. Phys. 88, 3015 (2000).Google Scholar
5. Bergmann, R. B., Oberbeck, L., and Wagner, T. A., J. Cryst. Growth xxx, (2001), in press.Google Scholar
6. Oberbeck, L. and Bergmann, R. B., Vacuum Solutions 18, 31 (2000).Google Scholar
7. Kern, W. and Puotinen, D. A., RCA Rev. 6, 187 (1970).Google Scholar
8. d'Aragona, F. Secco, J. Electrochem. Soc. 119, 948 (1972).Google Scholar
9. Nomarski, G. and Weill, A. R., Bull. Soc. Franc. Miner. Cryst. 77, 840 (1954).Google Scholar
10. Wagner, T. A., Oberbeck, L., Bergmann, R. B., and Werner, J. H., to appear in Solid State Phenomena xxx (2000).Google Scholar
11. Brendel, R. and Plieninger, R., in Technical Digest 9th International Photovoltaic Science and Engineering Conference (Arisumi Printing, Japan, 1996), p. 223.Google Scholar
12 Oberbeck, L., PhD thesis, University of Stuttgart, 2001, unpublished.Google Scholar
13. Oberbeck, L., Bergmann, R. B., Jensen, N., Oelting, S., and Werner, J. H., Solid State Phenomena 67–68, 459 (1999).Google Scholar
14. Baski, A. A., Erwin, S. C., Whitman, L. J., Surface Science 392, 69 (1997).Google Scholar
15. Herring, C., in Structure and Properties of Solid Surfaces, edited by Gomer, R. G. and Smith, C. S. (University of Chicago Press, Chicago, 1953), chapter1.Google Scholar
16. Ranke, W., Phys. Rev. B 41, 5243 (1990).10.1103/PhysRevB.41.5243Google Scholar