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Photo-induced Dissociation and Optical Cross Section of Si-H and S-H Complexes in GaAs and AlGaAs

Published online by Cambridge University Press:  01 February 2011

M. Barbé ,
F. Bailly ,
J. Chevallier ,
S. Silvestre ,
D. Loridant-Bernard ,
L. Kurowski ,
E. Constant  and
M. Constant
M. Barbé
Affiliation:
Laboratoire de Physique des Solides et de Cristallogénèse, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, France.
F. Bailly
Affiliation:
Laboratoire de Physique des Solides et de Cristallogénèse, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, France.
J. Chevallier
Affiliation:
Laboratoire de Physique des Solides et de Cristallogénèse, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, France.
S. Silvestre
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, UMR CNRS 8520, BP69, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex, France.
D. Loridant-Bernard
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, UMR CNRS 8520, BP69, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex, France.
L. Kurowski
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, UMR CNRS 8520, BP69, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex, France.
E. Constant
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, UMR CNRS 8520, BP69, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex, France.
M. Constant
Affiliation:
Laboratoire de Spectrochimie Infrarouge et Raman, UMR CNRS 8516, Université des Sciences et Technologies de Lille, 59655 Villeneuve d'Ascq Cedex, France.
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Abstract

In GaAs, (Si,H) complexes are efficiently dissociated at 300 K by photons with energies above 3.5 eV. Their optical cross-section is 10-19-10-18 cm2. This dissociation is the result of an electronic excitation of the Si-H bond of the complex from a bonding state to an antibonding state. (Si,H) and (S,H) complexes in AlGaAs alloys are also dissociated under UV illumination with optical cross-sections similar to GaAs. In passivated 2D AlGaAs-GaAs heterostructures, the evolution of the extra sheet carrier concentration at low photon densities presents a loss of free carriers attributed to the filling of surface states. In AlGaAs and in 2D AlGaAs-GaAs heterostructures, the replacement of hydrogen by deuterium in the complexes shows that the (Si,D) and (S,D) complexes are significantly more stable than the (Si,H) and (S,H) complexes as previously found in GaAs:Si,H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.8
Copyright
Copyright © Materials Research Society 2002

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References

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