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Physical Characterization of Residual Implant Damage in 4H-SiC Double Implanted Bipolar Technology

Published online by Cambridge University Press:  21 March 2011

N. G. Wright ,
C. M. Johnson ,
A. G. O'Neill ,
A. Horsfall ,
S. Ortolland ,
K. Adachi ,
G. J. Phelps ,
A. P. Knights ,
P. G. Coleman  and
C. P. Burrows
N. G. Wright
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastle upon Tyne, UK, NE1 7RU U.K.+44 191 222 7345, +4 191 222 8180
C. M. Johnson
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastle upon Tyne, UK, NE1 7RU U.K.+44 191 222 7345, +4 191 222 8180
A. G. O'Neill
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastle upon Tyne, UK, NE1 7RU U.K.+44 191 222 7345, +4 191 222 8180
A. Horsfall
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastle upon Tyne, UK, NE1 7RU U.K.+44 191 222 7345, +4 191 222 8180
S. Ortolland
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastle upon Tyne, UK, NE1 7RU U.K.+44 191 222 7345, +4 191 222 8180
K. Adachi
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastle upon Tyne, UK, NE1 7RU U.K.+44 191 222 7345, +4 191 222 8180
G. J. Phelps
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastle upon Tyne, UK, NE1 7RU U.K.+44 191 222 7345, +4 191 222 8180
A. P. Knights
Affiliation:
School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford GU2 5XH, United Kingdom.
P. G. Coleman
Affiliation:
Department of Physics, University of Bath, Claverton Down, Bath, BA2 7AY, United Kingdom.
C. P. Burrows
Affiliation:
Department of Physics, University of Bath, Claverton Down, Bath, BA2 7AY, United Kingdom.
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Abstract

The effects of post-implant anneal conditions on the level of residual damage resulting from nitrogen and boron implants after different anneal processes are investigated using the Positron Annihilation Spectroscopy (PAS) technique. It is shown that after implantation there is a substantial defect concentration significantly below the range of the implants. However such damage is almost completely recovered after anneal in contrast with the damage close to the implant range point. Such residual damage has a strong effect on the electrical characteristics of double implanted bipolar transistors - principally though reduction in carrier mobility and lifetime. It is shown that the precise implant and anneal conditions play a strong role in the level of such damage and the subsequent electrical performance of bipolar devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.30
Copyright
Copyright © Materials Research Society 2001

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References

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