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Preparation and Characterization of Sol-Gel Derived PbTiO3 Thin Layers on GaAs

Published online by Cambridge University Press:  16 February 2011

R. W. Schwartz ,
Z. Xu ,
D. A. Payne ,
T. A. DeTemple  and
M. A. Bradley
R. W. Schwartz
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
Z. Xu
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
D. A. Payne
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
T. A. DeTemple
Affiliation:
Department of Electrical and Computer Engineering, and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, IL 61801
M. A. Bradley
Affiliation:
Department of Electrical and Computer Engineering, and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

PbTiO3 thin layers were deposited onto GaAs by sol-gel processing. The GaAs substrates were encapsulated with Si3N4 or SiO2 to minimize diffusion problems. Gel layers were heat treated to 350°C for removal of organic species and for the densification of the amorphous gel structure. Rapid thermal processing at 600°C was used to crystallize PbTiO3 into the perovskite structure. SIMS analysis determined limited diffusion of Ga and As into PbTiO3. The fine grain microstructure contained domains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 167
Copyright
Copyright © Materials Research Society 1990

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References

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