Hostname: page-component-848d4c4894-ndmmz Total loading time: 0 Render date: 2024-06-03T12:34:21.471Z Has data issue: false hasContentIssue false

Probing the Limits of Silicon-Based Nanoelectronics

Published online by Cambridge University Press:  15 February 2011

S. J. Wind
Affiliation:
IBM T.J. Watson Research Center P.O. Box 218 Yorktown Heights, NY 10598
Y. Taur
Affiliation:
IBM T.J. Watson Research Center P.O. Box 218 Yorktown Heights, NY 10598
Y. Mii
Affiliation:
IBM T.J. Watson Research Center P.O. Box 218 Yorktown Heights, NY 10598
D. J. Frank
Affiliation:
IBM T.J. Watson Research Center P.O. Box 218 Yorktown Heights, NY 10598
H.-S. Wong
Affiliation:
IBM T.J. Watson Research Center P.O. Box 218 Yorktown Heights, NY 10598
D. A. Buchanan
Affiliation:
IBM T.J. Watson Research Center P.O. Box 218 Yorktown Heights, NY 10598
S. A. Rishton
Affiliation:
IBM T.J. Watson Research Center P.O. Box 218 Yorktown Heights, NY 10598
J. J. Bucchignano
Affiliation:
IBM T.J. Watson Research Center P.O. Box 218 Yorktown Heights, NY 10598
Y. Lii
Affiliation:
IBM T.J. Watson Research Center P.O. Box 218 Yorktown Heights, NY 10598
K. A. Jenkins
Affiliation:
IBM T.J. Watson Research Center P.O. Box 218 Yorktown Heights, NY 10598
Get access

Abstract

The ability to reduce device features to increasingly smaller dimensions offers the potential for remarkable circuit performance and low power consumption. CMOS (Complementary Metal-Oxide-Semiconductor) devices with 100 nm channel lengths offer a 2X performance gain over 0.25 μm technology at a reduced power supply as well as the potential for a 20X reduction in active power at comparable performance levels. Continued scaling of devices beyond 100 nm dimensions faces various fundamental limitations. Overcoming these limitations will require technological innovation in both device design and fabrication.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Dennard, R.H., Gaensslen, F.H., Yu, H.N., Rideout, V.L., Bassous, E. and LeBlanc, A.R., IEEEJ. Solid State Circuits SC–9, No. 5, 256 (1974).Google Scholar
2 Taur, Y., Mii, Y.-J.. Frank, D.J.. Wong, H.-S., Buchanan, D.A., Wind, S.J., Rishton, S.A., Sai-Halasz, G.A. and Nowak, E.J., IBMJ. Research and Development 39, 245 (1995).Google Scholar
3 Taur, Y., Wind, S., Mii, Y.J., Lii, Y., Moy, D., Jenkins, K.A., Chen, C.L., Coane, P.J., Klaus, D., Bucchignano, j., Rosenfield, M., Thomson, M.G.R. and Polcari, M., IEDM Technical Digest p. 127 (1993).Google Scholar
4 Shahidi, G. et al., IEEE Electron Device Lett. 14, 409 (1993).Google Scholar
5 See, e.g., M. Aoki et al., IEDM Technical Digest p. 939 (1990), or Yan, R. et al., Appl. Phys. Lett. 59, 3315 (1991).Google Scholar
6 Lii, Y.T., Reeves, C.M., Danner, D.A., Coane, P.J. and Wang, L.K., Proceedings of the 181st Electrochemical Society Meeting, St. Louis, MO, 17–22 May 1992.Google Scholar
7 Taur, Y., Sun, Y.C., Moy, D., Wang, L.K., Davari, B., Klepner, S.P. and Ting, C.Y., IEEE Trans. Electron Devices EDL–15, No. 3, 575 (1987).Google Scholar
8 Ganin, E., Wind, S., Ronsheim, P., Yapsir, A., Barmak, K., Bucchignano, J. and Assenza, R., Mat. Res. Soc. Symp. Proceedings 303, 109 (1993).Google Scholar
9 Clevenger, L.A. and Mann, R.W., Mat. Res. Soc. Symp. Proceedings 320, 15 (1994).Google Scholar
10 Wong, H.-S. and Taur, Y., IEDM Technical Digest p. 705 (1993).Google Scholar
11 Subbanna, S., Kesan, V.P., Tejwani, M.J., Restle, P.J., Mis, D.J. and lyer, S.S., 1991 IEEE Symposium on VLSI Technology Digest of Technical Papers p. 103 (1991).Google Scholar
12 Shahidi, G., Davari, B., Taur, Y., Warnock, J., Wordeman, M.R., McFarland, P., Mader, S, Rodriguez, M., Assenza, R., Bronner, G., Ginsberg, B., Lii, T., Polcari, M. and Ning, T.H., IEDM Technical Digest p. 587 (1990).Google Scholar
13 Frank, D.J., Laux, S.E. and Fischetti, M.V., IEDM Technical Digest p. 553 (1992).Google Scholar
14 Frank, D.J., Laux, S.E. and Fischetti, M.V., IEEE Trans. on Electron Devices 40, 2103 (1993).Google Scholar