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Process-Property Relationships For a-Si1-xCx:H Deposition: Excursions in Parameter Space Guided by Real Time Spectroellipsometry

Published online by Cambridge University Press:  16 February 2011

Yiwei Lu ,
Sangbo Kim ,
Mehmet Gunes ,
Yeeheng Lee ,
C.R. Wronski  and
R.W. Collins
Yiwei Lu
Affiliation:
Materials Research Laboratory, Department of Electrical Engineering, andThe Pennsylvania State University, University Park, PA 16802.
Sangbo Kim
Affiliation:
Materials Research Laboratory, Department of Physics, The Pennsylvania State University, University Park, PA 16802.
Mehmet Gunes
Affiliation:
Materials Research Laboratory, Department of Electrical Engineering, andThe Pennsylvania State University, University Park, PA 16802.
Yeeheng Lee
Affiliation:
Materials Research Laboratory, Department of Electrical Engineering, andThe Pennsylvania State University, University Park, PA 16802.
C.R. Wronski
Affiliation:
Materials Research Laboratory, Department of Electrical Engineering, andThe Pennsylvania State University, University Park, PA 16802.
R.W. Collins
Affiliation:
Materials Research Laboratory, Department of Physics, The Pennsylvania State University, University Park, PA 16802.
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Abstract

Real time spectroellipsometry (RTSE) has been applied to study the growth of a-Si1-xCx:H alloys (x∼0.1; Eg=1.90–2.00 eV) for applications as i- and p-type layers in wide band gap solar cells. Two important material parameters, the optical gap and the relative bond-packing density (or void volume fraction), can be estimated from RTSE data collected during the growth of a sequence of layers onto the same substrate using different plasma-enhanced CVD conditions. In this way, large regions of parameter space have been scanned expeditiously, and an improved understanding of the effects of H2-dilution, substrate temperature (Ts), plasma power, gas pressure, and gas flow on the film properties has been obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 595
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] Kuwano, Y., in: Plasma Deposited Thin Films, edited by Mort, J. and Jansen, F. (CRC, Boca Raton, FL 1986) p. 161.Google Scholar
[2] Matsuda, A. and Tanaka, K., J. Non-Cryst. Solids 97&98, 1367 (1987).Google Scholar
[3] Camargo, S.S. and Beyer, W., J. Non-Cryst. Solids 114, 807 (1989).Google Scholar
[4] Baker, S.H., Spear, W.E., and Gibson, R.A.G., Philos. Mag. B 62, 213 (1990).Google Scholar
[5] Alvarez, F., Sebastiani, M., Pozzilli, F., Fiorini, P., and Evangelisti, F., J. Appl. Phys. 71, 267 (1992).Google Scholar
[6] Lu, Y., An, I., Gunes, M., Wakagi, M., Wronski, C.R., and Collins, R.W., Appl. Phys. Lett. 63, 2228 (1993).Google Scholar
[7] Li, Yuan-Min, Mater. Res. Soc. Symp. Proc. 297, 803 (1993).Google Scholar
[8] Collins, R.W., Rev. Sci. Instrum. 61, 2029 (1990).CrossRefGoogle Scholar
[9] Mui, K., Basa, D.K., Smith, F.W. and Corderman, R., Phys. Rev. B 35, 8089 (1987);CrossRefGoogle Scholar
Mui, K. and Smith, F.W., Phys. Rev. B 38, 10623 (1988).Google Scholar
[10] Li, Y.M., An, I., Nguyen, H.V., Wronski, C.R., and Collins, R.W., Phys. Rev. Lett. 68, 2814 (1992).Google Scholar
[11] Cody, G.D. in: Semiconductors and Semimetals, Vol. 21B, edited by Pankove, J.I. (Academic Press, New York, 1984) Chapt. 2.Google Scholar
[12] Weiser, G. and Mell, H. J. Non-Cryst. Solids 114, 298 (1989).Google Scholar
[13] Luft, W. and Tsuo, Y.S., Hydrogenated AMorphous Silicon Alloy Deposition Processes, (Marcel Dekker, New York, 1993).Google Scholar