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Quantum Dot Spectral Tuning of Multijunction III-V Solar Cells

Published online by Cambridge University Press:  01 February 2011

Christopher Bailey ,
Seth Hubbard ,
Stephen J Polly ,
David V Forbes  and
Ryne P. Raffaelle
Christopher Bailey
Affiliation:
cgb3325@rit.edu, Rochester Institute of Technology, NanoPower Research Laboratory, Rochester, New York, United States
Seth Hubbard
Affiliation:
smhsps@rit.edu, Rochester Institute of Technology, NanoPower Research Laboratory, Rochester, New York, United States
Stephen J Polly
Affiliation:
sjp5958@rit.edu, Rochester Institute of Technology, NanoPower Research Laboratory, Rochester, New York, United States
David V Forbes
Affiliation:
dvfsps@rit.edu, Rochester Institute of Technology, NanoPower Research Laboratory, Rochester, New York, United States
Ryne P. Raffaelle
Affiliation:
ryne.raffaelle@nrel.gov, Rochester Institute of Technology, NanoPower Research Laboratory, Rochester, New York, United States
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Abstract

Improving the production of photocurrent in the middle junction of a InGaP/Ga(In)As/Ge triple-junction solar cells (TJSC) can improve the overall conversion efficiency of cell. One possible method to improve the middle junction photocurrent is inserting a quantum dot (QD) superlattice (SL) into the stack. It has been predicted that QD-SL enhanced TJSCs have an efficiency ceiling of 47% under a one-sun AM0 illumination spectrum. Additionally, QD array enhanced GaAs cells have the added benefit of possible intermediate band effects, anisotropic absorption and enhanced radiation tolerance. Embedding InAs quantum dots (QDs) in a single junction GaAs solar cell can increase sub-GaAs bandgap photocurrent generation. This method has been shown to improve the short circuit current density (Jsc) of single junction cells under simulated 1 sun air mass zero (AM0) illumination. However, the increase in strain due to the InAs QD self-assembly may cause defects that reduce the minority carrier lifetime resulting in losses in the cell open circuit voltage (Voc) on the order of 300-500 mV. The introduction of strain compensation (SC) layers into the superlattice (SL) structure of a QD solar cell has previously been shown to improve the device performance, including the partial recovery of Voc. Strain compensation can be used effectively to balance the residual strain, impede dislocation formation, and improve the solar cell characteristics. The effect of GaP strain compensation on the solar cell electrical and material properties was investigated. High resolution X-ray diffraction (HRXRD) scans along the symmetric (004) Bragg peak show weak intensity and wide FWHM at the zero order SL peak (SL0) for non-SC samples. Optimum SC thickness was theoretically determined using a zero in plane stress method and experimentally verified using HRXRD. Optimal strain compensation was then used to increase the QD SL stacking from 5x to 10x and 20x. Use of SC resulted in shifting of the SL0 peak toward the substrate peak as well as reduced FWHM and improved SL peak definition. Kinematical diffraction modeling of the QD structures using numerical simulation indicated this peak shift resulted from reduced overall strain in the SL stack up to 5ML of SC. The material quality improvement in the SC QD solar cells was manifested in an improved spectral response and Jsc. The optoelectronic results for GaAs solar cells with QD SL’s demonstrate a strong dependence on GaP SC layer thickness. In addition, comparison of multi junction (MJ) solar cells which incorporate the SC QD SL’s demonstrate the utility of additional sub-GaAs bandgap current contribution as a tool for additional current-matching optimization in MJ solar cells.

Keywords

III-Vphotovoltaicnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1121: Symposium N – Next-Generation and Nano-Architectured Photovoltaics , 2008 , 1121-N10-02
Copyright
Copyright © Materials Research Society 2009

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References

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