Hostname: page-component-848d4c4894-hfldf Total loading time: 0 Render date: 2024-06-02T22:50:01.143Z Has data issue: false hasContentIssue false
  • English
  • Français

Rapid Thermal Chemical Vapor Deposition: Selective Epitaxial Silicon Growth (SEG)

Published online by Cambridge University Press:  28 February 2011

J. W. Osenbach ,
Y. H. Ku  and
A. Kermani
J. W. Osenbach
Affiliation:
AT&T Bell Laboratories, Reading, PA 19612
Y. H. Ku
Affiliation:
RAPRO Technology Inc., Fremont, CA 94539
A. Kermani
Affiliation:
RAPRO Technology Inc., Fremont, CA 94539
Get access

Abstract

Rapid Thermal Chemical Vapor Deposition (RTCVD) offers great promise for deposition of high-quality, thin, abrupt interface epitaxial films. In addition, RTCVD systems operate under cold wall environment to minimize particles and cross contamination. SEG of silicon provides both isolation and active device wells with fine dimensional control. A combination of RTCVD and SEG holds great promise for future VLSI circuit technologies. In this paper, we present our results on selective growth of single crystal silicon using RTCVD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 33
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kermani, Ahmad et al. , Rapid Isothermal Processing, edited by Singh, Rajendra (SPIE Microelectronics Integrated Processing Conference. Proc. 1189, Santa Clara, CA 1989) pp. 15–26.Google Scholar
2. Green, M. L., Brasen, D., Luffman, H. and Kannan, V. C., J. Appl. Phys. 65, 2558 (1989).Google Scholar
3. Lee, S. K., Ku, Y. H. and Kwong, D. L., Appl. Phys. Lett. 54, 1775 (1989).Google Scholar
4. Borland, J. and Drowley, C., Solid State Tech. 28, 141 (1985).Google Scholar
5. Kitajima, H., Ishitani, A. and Endo, N., J. Electrochem. Soc. 833 (1986).Google Scholar
6. Manolin, J. and Borland, J., IEEE IEDM Tech. Dig., 20 (1987).Google Scholar
7. Osenbach, J. W., unpublished work on SEG using AMT 7810 barrel reactor.Google Scholar
8. Kermani, A., unpublished work on dopant activation using RTA at reduced pressure under various environment.Google Scholar