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Rare Earth Doped Porous Silicon Prepared by Electro-Chemical Method

Published online by Cambridge University Press:  10 February 2011

W. H. Zheng ,
M. L. Gong ,
D. L. Lian ,
W. K. Wong  and
K. W. Cheah
W. H. Zheng
Affiliation:
Department of Physics, Deparment of Chemistry, Hong Kong Baptist University, Kowloon, Hong Kong, +852/23046558, whzheng@ctsc.hkbu.edu.hk, kwcheah@hkbu.edu.hk
M. L. Gong
Affiliation:
Deparment of Chemistry, Hong Kong Baptist University, Kowloon, Hong Kong, +852/23046558
D. L. Lian
Affiliation:
Department of Physics, Deparment of Chemistry, Hong Kong Baptist University, Kowloon, Hong Kong, +852/23046558, whzheng@ctsc.hkbu.edu.hk, kwcheah@hkbu.edu.hk
W. K. Wong
Affiliation:
Deparment of Chemistry, Hong Kong Baptist University, Kowloon, Hong Kong, +852/23046558
K. W. Cheah
Affiliation:
Deparment of Chemistry, Hong Kong Baptist University, Kowloon, Hong Kong, +852/23046558
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Abstract

We have carried out an investigation of the electro-chemical doping (ECD) of porous silicon (PS) with rare earth elements, especially Er was chosen for the main doping element in our work. Under certain conditions, after doping a blue shift was shown in the visible range photoluminescence (PL), and enhancement of PL intensity was observed. We address this that the impurity states in forbidden gap increase the optical probability of trapping carriers and the optical transition probability. Moreover, in the Infrared (IR) range, luminescence is observed around 1.54μm at room temperature and is assigned to the optical transitions from intra-4f energy levels of Er3+. X-ray Photo-electronic Spectroscopy (XPS) showed that at least 3 atomic percen of the rare earth element has been incorporated into porous silicon layer. In conclusion, by choosing suitable electrolyte, we successfully doped rare earth elements into porous silicon by electro-chemical method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997 , 251
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Canham, T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2. Namavar, , Lu, F., Perry, C. H., Cremins, A., Kalkhoran, N. m. and Soref, R. A.. J. Appl. Phys., 77, 4813(1995).Google Scholar
3. Kimura, T., Yokoi, A., Horiguchi, H., Saito, R., Ikoma, T. and Sato, A., Appl. Phys. Lett. 65, 983(1994).Google Scholar
4. Alves, , Dasilva, M. F., Melo, A. A., Soares, J. C., Vanden Hoven, G. N., Polman, A., Evans, K. R., and Jones, C. R. in Rare Earth Doped Semiconductors, edited by Pomrenke, Gernot S., Klein, Paul B. and Langer, Dietrich W. (Mater. Res. Soc. Proc. 301, Pittsburgh, PA 1993), p. 175–180.Google Scholar
5. Petrova-Koch, V., Muschik, T., Kux, A., Meyer, B. K., Koch, F. and Lehmeann, V., Appl. Phys. Lett. 61, 943(1992)Google Scholar
6. Koch, , Petrova-Koch, V. and Muschik, T., Journal of Luminescence 57, 271 (1993)Google Scholar
7. Namavar, F., III-V Rev. 7. 10 (1994)Google Scholar
8. Yassievitch, I. N. and Kimberling, L. C., Secomcond. Sci. Technol. 8, 718 (1993)Google Scholar
9. Eaglsham, D. J., Michel, J., Fitzerald, E. A., Jacobson, D. C., Poste, J. M., Benton, J. L., Polman, A., Xie, Y. -H., and Kimberling, L. C., Appl. phys. Lett., 58, 2797 (1993)Google Scholar