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RBS and TEM Analysis of Ta Silicides on GaAs

Published online by Cambridge University Press:  22 February 2011

K.L. Kavanagh ,
S.H. Chen ,
C.J. Palmstrom  and
C.B. Carter
K.L. Kavanagh
Affiliation:
Dept. of Materials Science and Engineering and S.D.Mukherjee, Dept. of Electrical Engineering, Cornell University, Ithaca, NY 14853
S.H. Chen
Affiliation:
Dept. of Materials Science and Engineering and S.D.Mukherjee, Dept. of Electrical Engineering, Cornell University, Ithaca, NY 14853
C.J. Palmstrom
Affiliation:
Dept. of Materials Science and Engineering and S.D.Mukherjee, Dept. of Electrical Engineering, Cornell University, Ithaca, NY 14853
C.B. Carter
Affiliation:
Dept. of Materials Science and Engineering and S.D.Mukherjee, Dept. of Electrical Engineering, Cornell University, Ithaca, NY 14853
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Abstract

Electron-beam and sputter-deposited Ta silicides on GaAs were annealed in an As2 overpressure ambient to temperatures as high as 920°C for 20mim. The films were then characterized with RBS, cross-sectional TEM and both electron and x-ray diffraction. The morphology of sputtered TaSi2/GaAs interfaces did not change, however, some interaction was detected at electron-beam deposited GaAs/silicide interfaces. Arsenic in-diffusion was detected at temperatures above 800°C and it was found to be dependent on the stoichiometry of the films. Arsenic diffusion into Si-rich electron-beam and sputter deposited films was low, whereas significantly more As diffused into the Ta-rich silicide. Some indium (3×l015atoms/cm2), from the InAs used as the source of As2overpressure, was observed to accumulate at all GaAs/silicide interfaces at temperatures above 800°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 143
Copyright
Copyright © Materials Research Society 1984

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References

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