Hostname: page-component-848d4c4894-m9kch Total loading time: 0 Render date: 2024-05-18T09:48:27.971Z Has data issue: false hasContentIssue false

Relationship Between Interfacial Adhesion and Dielectric Reliability of Cu Alloy Films

Published online by Cambridge University Press:  01 February 2011

Seol-Min Yi
Affiliation:
snumdml@hotmail.com, Seoul National University, Material Science and Engineering, Seoul Nat'l Univ. 30-506, Sillim-dong, Gwanak-gu, Seoul, N/A, 151-744, Korea, Republic of, +82-2-873-5818, +82-2-883-8197
Kwang-Ho Jang
Affiliation:
tom82@snu.ac.kr, Seoul National University, Material Science and Engineering, Seoul Nat'l Univ. 30-506, Sillim-dong, Gwanak-gu, Seoul, N/A, 151-744, Korea, Republic of
Yong-Hak Huh
Affiliation:
yhhuh@kriss.re.kr, Korea Research Institute of Standard and Science, DaeJeon, N/A, 305-340, Korea, Republic of
Young-Bae Park
Affiliation:
ybpark@andong.ac.kr, Andong National University, Andong, N/A, 760-749, Korea, Republic of
Young-Chang Joo
Affiliation:
ycjoo@snu.ac.kr, Seoul National University, Seoul, N/A, 151-744, Korea, Republic of
Get access

Abstract

Cu alloy has been suggested to enhance reliabilites in future technology. To evaluate the effects of alloying elements on electrical and mechanical reliabilities, Mg and Ru were chosen as alloying elements. Because alloying elements to Cu should not increase resistivity over comparable value to pure Cu, the resistivity of pure Cu, Cu-0.7at%Mg alloy and Cu-2.2at%Ru alloy was compared. Time dependent dielectric breakdown (TDDB) under bias-temperature stress (BTS) tests were accomplished to evaluate the effect of alloying elements on dielectric reliability. The standard four point bending experiments were conducted to measure critical interfacial adhesion energy of conducting metal to SiO2. The relationship of the effect of alloying elements on reliabilities to distribution of alloying elements was analyzed using Auger Electron Spectroscopy (AES). Our results show alloying Mg to Cu can enhance reliability by forming self-passivating layer on its surface and interface while Ru does not.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

references

1 Felipe, T. Suwwan de, Murarka, S.P., Bedell, S., Lanford, W.A., Thin Solid Films 335 (1998) 49.Google Scholar
2 Lee, W.H., Cho, H.L., Cho, B.S., Kim, J.Y., Nam, W.J., Kim, Y.-S., Jung, W.G., Kwon, H., Lee, J.H., Lee, J.G., Reucroft, P.J., Lee, C.M., Lee, E.G., Appl. Phys. Lett. 77 (2000) 2192.Google Scholar
3 Takewaki, T., Kaihara, R., Ohmi, T., Nitta, T., in: International Electron Devices Meeting, Washington DC, U.S.A., Dec. 10-13, 1995, Proceeding of International Electron Devices Meeting (1995) 253.Google Scholar
4 Lanford, W.A., Ding, P.J., Wang, W., Hymes, S., Muraka, S.P., Thin Solid Films 262 (1995) 234.Google Scholar
5 Lanford, W.A., Ding, P.J., Wang, W., Hymes, S., Murarka, S.P., Mater. Chem. And Phys. 41 (1995) 192.Google Scholar
6 Yi, Seol-Min, An, Jung-Uk, Hwang, Sang-Soo, Huh, Yong-Hak, Park, Young-Bae, Joo, Young-Chang, to be published.Google Scholar
7 Hwang, S.-S., Lee, H.-C., Ro, H.W., Yoon, D.Y., and Joo, Y.-C., Appl. Phys. Lett. 87 (2005) Art. No. 111915.Google Scholar
8 Ma, Q., Fujimoto, H., Flinn, P., Jain, V., Adibi-Rizi, F., Moghadam, F., Dauskardt, R.H., in: Oates, A.S., Filter, W.F., Rosenberg, R., Greer, A.L., Gadepally, K. (Eds.), Materials Reliability in Microelectronics, San Francisco, U.S.A., April 17-21, 1995, Material Research Society Symposium Proceeding 391 (1995) 91.Google Scholar
9 Dauskardt, R.H., Lane, M., Ma, Q., Krishna, N., Eng. Frac. Mech. 61 (1998) 141.Google Scholar