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Resistance Non-volatile Memory – RRAM

Published online by Cambridge University Press:  01 February 2011

Alex Ignatiev ,
Naijuan Wu ,
Xin Chen ,
Yibo Nian ,
Christina Papagianni ,
Shangqing Liu  and
John Strozier
Alex Ignatiev
Affiliation:
Ignatiev@uh.edu, University of Houston, Center for Advanced Materials, 4800 Calhoun Road, Houston, TX, 77204, United States
Naijuan Wu
Affiliation:
naijwu@uh.edu, University of Houston, Center for Advanced Materials, 4800 Calhoun Road, Houston, TX, 77204, United States
Xin Chen
Affiliation:
xinchen73@hotmail.com, University of Houston, Center for Advanced Materials, 4800 Calhoun Road, Houston, TX, 77204, United States
Yibo Nian
Affiliation:
YNian@UH.EDU, University of Houston, Center for Advanced Materials, 4800 Calhoun Road, Houston, TX, 77204, United States
Christina Papagianni
Affiliation:
ignatiev@uh.edu, University of Houston, Center for Advanced Materials, 4800 Calhoun Road, Houston, TX, 77204, United States
Shangqing Liu
Affiliation:
emailtosqliu@yahoo.com, University of Houston, Center for Advanced Materials, 4800 Calhoun Road, Houston, TX, 77204, United States
John Strozier
Affiliation:
John.Strozier@esc.edu, University of Houston, Center for Advanced Materials, 4800 Calhoun Road, Houston, TX, 77204, United States
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Abstract

Electric-pulse induced resistance (EPIR) change effect encompasses the reversible change of resistance of a thin oxide film under the application of short, low voltage pulses. The phenomenon is widely observed in complex and binary oxides, and is the basis for development of non-volatile resistance random access memory (RRAM). A variety of analytical techniques have been employed to understand the origin of the resistance change with recent data yielding a model incorporating oxygen ion/vacancy diffusion and pile-up near the interface region of the oxide at the impervious metal interface. Further efforts are still required to fine tune the model and apply it to the optimization of RRAM device development.

Keywords

memoryoxidescanning probe microscopy (SPM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I05-03
Copyright
Copyright © Materials Research Society 2007

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References

1. Liu, S. Q., Wu, N. J., and Ignatiev, A., Appl. Phys. Lett. 76(19), 2749 (2000).Google Scholar
2. Zhuang, W. W., Pan, W., Ulrich, B. D., Lee, J. J., Stecker, L., Burmaster, A., Evans, D. R., Hsu, S. T., Tajiri, M., Shimaoka, A., Inoue, K., Naka, T., Awaya, N., Sakiyama, K., Wang, Y., Liu, S. Q., Wu, N. J., Ignatiev, A., IEDM '02 Digest. International, 8-11 Dec. (2002) pp. 193–196.Google Scholar
3. Tokura, Y., Physics Today, 56(7), 50 (2003).Google Scholar
4. Pinnow, C. U., and Mikolajick, T., J. Electrochem. Soc. 151(6), K13 (2004).Google Scholar
5. Dagotto, E., Science 309, 257 (2005).Google Scholar
6. Seo, S., Lee, M. J., Seo, D. H., Choi, S. K., Suh, D.-S., Joung, Y. S., Yoo, I. K., Byun, I. S., Hwang, I. R., Kim, S. H., and Park, B. H., Appl. Phys. Lett. 86, 093509 (2005).Google Scholar
7. Beck, A., Bednorz, J. G., Gerber, C., Rossel, C., and Widmer, D., Appl. Phys. Lett. 77, 139 (2000).Google Scholar
8. Tulina, N. A., Ionov, A. M., and Chaika, A. N., Physica (Amsterdam) C366, 23 (2001).Google Scholar
9. Rozenberg, M. J., Inoue, I. H., and Sanchez, M. J., Phys. Rev. Lett. 92, 178302 (2004).Google Scholar
10. Fujii, T., Kawasaki, M., Sawa, A., Akoh, H., Kawazoe, Y., and Tokura, Y., Appl. Phys. Lett. 86, 012107 (2005).Google Scholar
11. Szot, K., Speier, W., Bihlmayer, G., and Waser, R., Nat. Mater. 5, 312 (2006).Google Scholar
12. Tsui, S., Wang, Y. Q., Xue, Y. Y., and Chu, C. W., Appl. Phys. Lett. 89, 123502 (2006).Google Scholar
13. Chen, X., Wu, N. J., Strozier, J., and Ignatiev, A., Appl. Phys. Lett. 87, 233506 (2005).Google Scholar
14. Ju, H. L., Gopalakrishnan, J., Peng, J. L., Li, Q., Xiong, G. C., Venkatesan, T., and Greene, R.L., Phys. Rev. B 51(9), 6143 (1995).Google Scholar
15. Chen, F., Zhao, T., Fei, Y. Y., Liu, H. B., Chen, Z. H., Yang, G. Z., and Zhu, X. D., Appl. Phys. Lett. 80, 2889 (2002).Google Scholar
16. Tomioka, Y., Asamitsu, A., Kuwahara, H., Moritomo, Y., and Tokura, Y., Phys. Rev. B 53, R1689 (1996).Google Scholar
17. Sawa, A., Fujii, T., Kawasaki, M., and Tokura, Y., Appl. Phys. Lett. 85, 4073 (2004).Google Scholar
18. Nian, Y., Strozier, J., Wu, N. J., Chen, X., and Ignatiev, A., Phys. Rev. Lett. 98, 146403 (2007).Google Scholar
19. Huerth, S. H., Hallen, H. D., and Moeckly, B., Phys. Rev. B 67, 180506 (2003).Google Scholar
20. Glicksman, M. E., D.ffusion in Solids: Field theory, Solid-State Principles, and Applications (Wiley, New York, 2000).Google Scholar
21. Gramm, A., Zahner, Th., Spreitzer, U., Rossler, R., Pedarnig, J.D., Bauerle, D., and Lengfellner, H., Europhys. Lett., 49, 501(2000).Google Scholar