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RF Sputtered BZN Pyrochlore Thin Films for Voltage Tunable Dielectric Device Applications

Published online by Cambridge University Press:  01 February 2011

Young Pyo Hong
Affiliation:
Department of Materials Science and Engineering, Ajou University, Suwon, Korea
Seok Ha
Affiliation:
Department of Materials Science and Engineering, Ajou University, Suwon, Korea
Ha Yong Lee
Affiliation:
Department of Materials Science and Engineering, Ajou University, Suwon, Korea
Young Cheol Lee
Affiliation:
Department of Materials Science and Engineering, Ajou University, Suwon, Korea
Kyung Hyun Ko
Affiliation:
Department of Materials Science and Engineering, Ajou University, Suwon, Korea
Dong Wan Kim
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul, Korea
Hee Bum Hong
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul, Korea
Kug Sun Hong
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul, Korea
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Abstract

The BZN pyrochlore thin films were prepared on platinized Si substrates using a reactive RF magnetron sputtering. The structures, surface morphologies, dielectric properties and voltage tunable properties of films with deposition parameters were investigated. The BZN thin films have a cubic pyrochlore phase and secondary phases of zinc niobate, bismuth niobate when crystallized at 600° 800°. The dielectric constant and tunability of thin films are O2/Ar ratio and post-annealing temperature dependent. The BZN thin films sputtered in 15% O2 and annealed at 700° had a dielectric constant of 153, tan δof~0.003 and maximum tunability of 14% at 1,000kV/cm.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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