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Spatial Bandgap Tuning in Long Wavelength InAs Quantum Dots-in-Well Laser Structure

Published online by Cambridge University Press:  01 February 2011

Yang Wang ,
Clara E. Dimas ,
Hery S. Djie ,
Boon S. Ooi ,
Gerard Dang  and
Wayne Chang
Yang Wang
Affiliation:
yaw2@lehigh.edu, Lehigh University, Electrical and Computer Engineering, RM226, Sinclair Laboratory, 7 Asa Drive, Bethlehem, PA, 18015, United States, 610-758-3793
Clara E. Dimas
Affiliation:
ced204@lehigh.edu, Lehigh University, Electrical and Computer Engineering, United States
Hery S. Djie
Affiliation:
hsd204@lehigh.edu, Lehigh University, Electrical and Computer Engineering, United States
Boon S. Ooi
Affiliation:
bsooi@lehigh.edu, Lehigh University, Electrical and Computer Engineering, United States
Gerard Dang
Affiliation:
gdang@arl.army.mil, U. S. Army Research Laboratory, AMSRD-ARL-SE-EM, United States
Wayne Chang
Affiliation:
wchang@arl.army.mil, U. S. Army Research Laboratory, AMSRD-ARL-SE-EM, United States
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Abstract

We employed the postgrowth impurity-free vacancy diffusion technique to selectively tune the bandgap of the InAs/InGaAlAs dots-in-well laser structure grown on (100) InP substrate. A blueshift up to 170 nm with a significant decrease in the photoluminescence linewidth has been observed. Spatial control of the bandgap shifts has been achieved using SiO2 and SixNy layers as annealing caps. A differential wavelength shift of 76 nm has been observed after a rapid thermal annealing step at 750 °C for 30 s. In contrast to most reported results in other material systems using similar process, we observed a larger bandgap shift from the SixNy capped samples than from the SiO2 capped samples. Our theoretical calculation indicates that the unusual intermixing behavior in this material system is governed by different interdiffusion rates of group-III atoms.

Keywords

diffusionnanostructureoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE03-07
Copyright
Copyright © Materials Research Society 2006

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References

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