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Strain-free Low-defect-density Bulk GaN with Nonpolar Orientations

Published online by Cambridge University Press:  01 February 2011

Tanya Paskova ,
Plamen P. Paskov ,
Vanya Darakchieva ,
Roland Kroeger ,
Detlef Hommel ,
Bo Monemar ,
Sebastian Lourdudoss ,
Edward Preble ,
Andrew Hanser  and
Mark N. Williams
...Show all authors
Tanya Paskova
Affiliation:
paskova@ifp.uni-bremen.de, University of Bremen, Institute of Solid State Physics, Otto Hahn Allee NW1, Bremen, D-28359, Germany, +49 421 218 7357, +49 421 218 4581
Plamen P. Paskov
Affiliation:
plapa@ifm.liu.se, Linkoping University, Linkoping, S-58183, Sweden
Vanya Darakchieva
Affiliation:
vanya@ifm.liu.se, Linkoping University, Linkoping, S-58183, Sweden
Roland Kroeger
Affiliation:
rkroeger@ifp.uni-bremen.de, University of Bremen, Bremen, D-28359, Germany
Detlef Hommel
Affiliation:
hommel@ifp.uni-bremen.de, University of Bremen, Bremen, D-28359, Germany
Bo Monemar
Affiliation:
bom@ifm.liu.se, Linkoping University, Linkoping, S-58183, Sweden
Sebastian Lourdudoss
Affiliation:
doss@rit.kth.se, Royal Institute of Technology, Kista, S-16440, Sweden
Edward Preble
Affiliation:
preble@kymatech.com, Kyma Technologies Inc., Raleigh, NC, 27617, United States
Andrew Hanser
Affiliation:
hanser@kymatech.com, Kyma Technologies Inc., Raleigh, NC, 27617, United States
Mark N. Williams
Affiliation:
williams@kymatech.com, Kyma Technologies Inc., Raleigh, NC, 27617, United States
Michael Tutor
Affiliation:
tutor@kymatech.com, Kyma Technologies Inc., Raleigh, NC, 27617, United States
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Abstract

Bulk GaN sliced in bars along (11-20) and (1-100) planes from a boule grown in the [0001] direction by HVPE was confirmed as strain free material with a low dislocation density by using several characterization techniques. The high-structural quality of the material allows photoluminescence studies of free excitons, principal donor bound excitons and their two-electron satellites with regard to the optical selection rules. Raman scattering study of the bulk GaN with nonpolar orientations allows a direct access to the active phonon modes and a direct determination of their strain-free positions.

Keywords

crystal growthx-ray diffraction (XRD)optical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I03-04
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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