Hostname: page-component-848d4c4894-ndmmz Total loading time: 0 Render date: 2024-05-23T20:43:33.925Z Has data issue: false hasContentIssue false
  • English
  • Français

Studies of Si Surface Chemistry and Epitaxy Using Scanning Tunneling Microscopy and Spectroscopy

Published online by Cambridge University Press:  25 February 2011

Phaedon Avouris  and
Robert Wolkow
Phaedon Avouris
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598.
Robert Wolkow
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598.
Get access

Abstract

We apply scanning tunneling microscopy (STM) and spectroscopy (STS) to study the reaction of NH3 with Si(111)-(7×7), and the epitaxial growth of CaF2 on Si(11). By a combination of topographs and atom-resolved spectra we can follow the spatial distribution of the reaction and changes in electronic structure with atomic resolution. We find that there are strong site-selectivities for the NH3 reaction on the 7×7 surface. We also observe the initial stages of the CaF2 deposition and even are able to image insulating multi-layer CaF2 films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 157
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. For reviews see: Binnig, G. and Rohrer, H., Rev. Mod. Phys. 59, 615 (1987); P. K. Hansma and J. Tersoff, J. Appl. Phys. 61, R1 (1987).Google Scholar
2. Takayanagi, K., Tamishiro, Y., Takahashi, M., Motoyoshi, H., and Yagi, K., J. Vac. Sci. Technol. A3, 1502 (1985).Google Scholar
3. Wolkow, R. and Avouris, Ph., Phys. Rev. Lett. 60, 1049 (1988); Ph. Avouris and R. Wolkow, Phys. Rev. B, to be published.Google Scholar
4. Feenstra, R. M., Stroscio, J. A. and Fein, A. P., Surf. Sci. 181, 295 (1984).Google Scholar
5. Northrup, J. E., Phys. Rev. Lett. 57, 154 (1986).Google Scholar
6. Tanaka, S., Onchi, M. and Nishijima, M., Surf. Sci. L756, (1987).Google Scholar
7. Bozso, F. and Avouris, Ph., Phys. Rev. B38, 3937 (1988).CrossRefGoogle Scholar
8. Tromp, R. M. and Reuter, M. C., Phys. Rev. Lett. 61, 1756 (1988).CrossRefGoogle Scholar
9. Rieger, D., Himpsel, F. J., Karlsson, V. O., McFeely, F. R. and Yarmoff, J. A., Phys. Rev. B34, 7295 (1986).Google Scholar
10. Olmstead, M. A., Uhrberg, R. I. G., Bringans, R. D., and Bachrach, R. Z., Phys. Rev. B35, 7526 (1987).CrossRefGoogle Scholar
11. Wolkow, R. and Avouris, Ph., to be published.Google Scholar
12. Bozso, F. and Avouris, Ph., Appl. Phys. Lett. 53, 1095 (1988); Phys. Rev. B38, 3943 (1988); Phys. Rev. Lett. 57, 1185 (1986).Google Scholar
13. McCord, M. A. and Pease, R. F. W., J. Vac. Sci. Technol. B4, 86 (1986); E. E. Ehrichs, S. Yoon, and A. L. deLozanne, Appl. Phys. Lett. (1988); in press.Google Scholar