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Study of Interfacial Sharpness and Growth in (GaAs)M(AlAs)N Superlatihces
Published online by Cambridge University Press: 25 February 2011
Abstract
X-ray diffraction, inelastic light scattering, photoluminescence and photoluminescence excitation spectroscopies have been employed to study the effects of growth conditions on the interfacial sharpness of GaAs/AlAs superlattices. In addition to describing which changes in the MBE growth procedures result in the sharpest interfaces, this study addresses the relative strengths and weaknesses of the experimental probes employed in the examination of interfacial irregularities.
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- Copyright © Materials Research Society 1990
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