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A Study of the Interface Between THM Grown MCT Crystals and Cdte Seeds.

Published online by Cambridge University Press:  25 February 2011

I. Shilo ,
E. Kedar  and
D. Szafranek
I. Shilo
Affiliation:
Semi-Conductor Devices, Jerusalem 91082
E. Kedar
Affiliation:
Semi-Conductor Devices, Jerusalem 91082
D. Szafranek
Affiliation:
Institute of Earth Sciences, The Hebrew University of Jerusalem, 91904, Israel
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Abstract

HgCdTe crystals have been grown from CdTe seeds by the travelling heater method (THM). Three different kinds of interfaces between the growing crystal and the seed were found: a sharp planar interface; a non-planar interface which is caused by meltback near the ampoule walls; a diffuse zone, where an interface cannot be discerned. A correlation was found between the initial growth parameters and the interface structure. Microprobe analysis revealed a boundary layer which, in the case of the planar interface, had an unusual shape. This layer had a thickness varying from 400 to 800 microns. It consisted mostly of HgTe, and contained holes as defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 47
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Triboulet, R., Duy, T. Nguyen, and Durand, A., J. Vac. Sci. Technol. A3(1), (1985).Google Scholar
2. Colombo, L., Chang, R.R., Chang, C.J., and Baird, B.A., J. Vac. Sci Technol. A6(4), 2795 (1988).CrossRefGoogle Scholar
3. Kim, Do Hyun and Brown, R.A., J. Cryst. Growth 96, 609 (1989).CrossRefGoogle Scholar
4. Holland, L. R., J. Cryst. Growth 96, 577 (1989).CrossRefGoogle Scholar
5. Huang, Y., Debnam, W.J. and Fripp, A.L., J. Cryst. Growth 104, 315 (1990).CrossRefGoogle Scholar
6. Szofran, F.R. and Lehoczky, S.L., J. Cryst. Growth 70, 349 (1984).CrossRefGoogle Scholar
7. Yip, V.F.S., Chang, C.E. and Wilcox, W.R., J. Cryst. Growth 29, 69 (1975).CrossRefGoogle Scholar
8. Chang, J., Baird, B., Liao, Pok-Kai, Chang, R. and Colombo, L., J. cryst. Growth 98, 595 (1989).CrossRefGoogle Scholar
9. Capper, P., Gosney, J.J.G., Jones, C.L. and Quelch, M.J.T., J. Cryst. Growth 63, 154 (1983).CrossRefGoogle Scholar