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Surface Morphology of GaN: Flat Versus Vicinal Surfaces

Published online by Cambridge University Press:  03 September 2012

M.H. Xie ,
S.M. Seutter ,
L.X. Zheng ,
S.H. Cheung ,
Y.F. Ng ,
Huasheng Wu  and
S.Y. Tong
M.H. Xie
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong
S.M. Seutter
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong
L.X. Zheng
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong
S.H. Cheung
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong
Y.F. Ng
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong
Huasheng Wu
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong
S.Y. Tong
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong
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Abstract

The surface morphology of GaN films grown by molecular beam epitaxy (MBE) is investigated by scanning tunneling microscopy (STM). A comparison is made between flat and vicinal surfaces. The wurtzite structure of GaN leads to special morphological features such as step pairing and triangularly shaped islands. Spiral mounds due to growth at screw threading dislocations are dominant on flat surfaces, whereas for vicinal GaN, the surfaces show no spiral mound but evenly spaced steps. This observation suggests an effective suppression of screw threading dislocations in the vicinal films. This finding is confirmed by transmission electron microscopy (TEM) studies. Continued growth of the vicinal surface leads to step bunching that is attributed to the effect of electromigration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.29
Copyright
Copyright © Materials Research Society 1999

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