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Surface Reaction Intermediates in Ge Chemical Vapor Deposition on Silicon

Published online by Cambridge University Press:  22 February 2011

C. Michael Greenlief  and
Lori A. Keeling
C. Michael Greenlief
Affiliation:
University of Missouri-Columbia, Department of Chemistry, Columbia, MO 65211
Lori A. Keeling
Affiliation:
University of Missouri-Columbia, Department of Chemistry, Columbia, MO 65211
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Abstract

Computational programs are often used for estimating molecular orbital energies and geometries. The results of these calculations can also provide information needed for investigation of adsorption and decomposition mechanisms on surfaces. In this study, ab initio methods are used to calculate properties of gas phase diethylgermane and GeHx-substituted silanes (x=1−3). The silanes are used as models for surface Ge hydrides. The calculated gas phase molecular orbital energies are then compared with experimentally determined molecular orbital energies for the adsorbed species. The surface species are prepared by germane, digermane, ethylbromide, or diethylgermane adsorption on the Si(100)-(2×1) surface and the molecular orbital energies are measured by photoelectron spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 489
Copyright
Copyright © Materials Research Society 1994

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