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Te Induced AlAs/GaAs Superlattice Mixing

Published online by Cambridge University Press:  21 February 2011

P. Mel ,
S. A. Schwarz ,
T. Venkatesan ,
C. L. Schwartz  and
E. Colas
P. Mel
Affiliation:
Department of Physics, Rutgers University, Piscataway, NJ 08855–0849
S. A. Schwarz
Affiliation:
Bellcore, Red Bank, NJ 07701–7020
T. Venkatesan
Affiliation:
Department of Physics, Rutgers University, Piscataway, NJ 08855–0849
C. L. Schwartz
Affiliation:
Bellcore, Red Bank, NJ 07701–7020
E. Colas
Affiliation:
Bellcore, Red Bank, NJ 07701–7020
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Abstract

Te enhanced mixing of AlAs/GaAs superlattice has been observed by secondary ion mass spectrometry. The superlattice sample was grown by organometallic chemical vapor deposition and doped with Te at concentrations of 2×1017 to 5×1018 cm−.3 In the temperature range from 700 to 1000 C, a single activation energy for the Al diffusion of 2.9 eV was observed. Furthermore, it has been found that the relationship between the Al diffusion coefficient and Te concentration is linear. Comparisons have been made between Si and Te induced superlattice mixing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 71
Copyright
Copyright © Materials Research Society 1988

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References

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