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Temperature- and Time-Dependence of Boron-Enhanced Diffusion From Evaporated- and Ultra-Low Energy Ion-Implanted Layers

Published online by Cambridge University Press:  10 February 2011

Aditya Agarwal ,
H.-J. Gossmann  and
D. J. Eaglesham
Aditya Agarwal
Affiliation:
Eaton Semiconductor Equipment Operations, 55 Cherry Hill Drive, Beverly, MA 01915
H.-J. Gossmann
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill, NJ 07974
D. J. Eaglesham
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill, NJ 07974
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Abstract

Silicon layers containing B in excess of a few atomic percent create a supersaturation of Si self-interstitials in the underlying Si, resulting in enhanced diffusion of B in the substrate (boron-enhanced diffusion, BED). The temperature- and time-dependence of BED is investigated here. Evaporated-boron as well as ultra-low energy 0.5-keV B-implanted layers were annealed at temperatures from 1100 to 800°C for times ranging from 3 to 3000s. Isochronal 10s anneals reveal that the BED effect increases with increasing temperature up to 1050°C and then decreases. In contrast, a simulation of interstitial generation via the kick-out mechanism predicts a decreasing dependence on increasing temperature leading to the conclusion that the kick-out mechanism is not the dominant source of excess interstitials responsible for BED. The diffusivity enhancements from the combined effects of BED and TED (transient-enhanced diffusion), measured in 2×105cm−2, 0.5-keV B-implanted samples, show a similar temperature dependence as seen for evaporated B, except that the maximum enhancement occurs at 1000°C. The temperature-dependent behavior of BED supports the hypothesis that the source of excess interstitials is the formation of a silicon boride phase in the high B concentration silicon layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 3
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. National Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, 1997).Google Scholar
2. Gossmann, H.J., Haynes, T. E., Stolk, P. A., Jacobson, D. C., Gilmer, G. H., Poate, J. M., Luftman, H. S., Mogi, T. K., and Thompson, M. O., Appl. Phys. Lett. 71 (26), 3862 (1997).Google Scholar
3. Stolk, P. A., Gossmann, H.J., Eaglesham, D. J., Jacobson, D. C., Rafferty, C. S., Gilmer, G. H., Jaralz, M., Poate, J. M., and Haynes, T. E., J. Appl. Phys. 81 (9), 61 (1997).Google Scholar
4. Agarwal, Aditya, Gossmann, H.J., Eaglesham, D. J., Pelaz, L., Jacobson, D. C., Haynes, T. E., and Erokhin, Yu. E., Appl. Phys. Lett. 71, (21) 3141 (1997).Google Scholar
5. Agarwal, Aditya, Eaglesham, D. J., Gossmann, H.J., Pelaz, L., Herner, S. B., Jacobson, D. C., Haynes, T. E., Erokhin, Y. E., and Simonton, R., IEDM Tech. Digest, 467 (1997).Google Scholar
6. Agarwal, Aditya, Gossmann, H.J., Eaglesham, D. J., Pelaz, L., Herner, S. B., Jacobson, D. C., Haynes, T. E., and Simonton, R., Mater. Sci. Semicond. Proc. 1, 17 (1998).Google Scholar
7. Agarwal, Aditya, Gossmann, H.J., Eaglesham, D. J., Hemer, S. B., Fiory, A. T., and Haynes, T. E., Appl. Phys. Lett., submitted Oct 25, 1998.Google Scholar
8. Fahey, P. M., Griffin, P. B., and Plummer, J. D., Rev. Mod. Phys. 61, 289 (1989).Google Scholar
9. Fair, R. B. and Tsai, J. C. C., J. Electrochem. Soc. 124, 1107 (1977).Google Scholar
10. Huh, J. Y., Gésele, U. and Tan, T. Y., J. Appl. Phys. 78 (10), 5926 (1995).Google Scholar
11. Gossmann, H.J., Unterwald, F. C., and Luftman, H. S., J. Appl. Phys. 73, 8237 (1993).Google Scholar
12. Gossmann, H.J., Vredenberg, A. M., Rafferty, C. S., Luftman, H. S., Unterwald, F. C., Jacobson, D. C., Boone, T., and Poate, J. M., J. Appl. Phys. 74, 3150 (1993).Google Scholar
13. An interstitial disturbance at the surface or interface propagates with an effective interstitial diffusivity, D, ft. It is an effective value, since traps, present in all real materials, retard Is. In the MBE-grown layers utilized in this study, D 1, ff- 2x10−12cm −2 at 800°C, i.e. the diffusion length after a 3000s anneal is -11tm. If there were interstitial injection it would have reached the marker layers.Google Scholar
14. Solmi, S. and Servidori, M., Sol. St. Phenom. 1&2, 65 (1988).Google Scholar
15. Bracht, H., Stolwijk, N. A., and Mehrer, H., Phys. Rev. B 52, 16542 (1995).Google Scholar
16. Rafferty, C. S., B.Biegel, Yu, Z., Ancona, M. G., Bude, J., and Dutton, R. W., Proc. SYSPAD'98, Leuven, Belgium, Sept. 24, 1998, p. 137.Google Scholar
17. Pelaz, L., private communication.Google Scholar
18. The next level of complexity would be to include extrinsic effects arising from the high B concentration as well as the formation and dissolution kinetics of the BSin clusters or the silicon boride phase. Unfortunately, these effects are not well understood at present.Google Scholar
19. Dunham, S., Chakravarthi, S., and Gencer, A. H., IEDM Tech. Digest, 501 (1998)Google Scholar
20. Armigliato, A., Nobili, D., Ostoja, P., Servidori, M., and Solmi, S., in Semiconductor Silicon, edited by Huff, H. R. and Sirti, E., (Electrochemical Society, 1977).Google Scholar