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A Tentative Identification of Certain Deep Levels in GaAs and Related Compounds

Published online by Cambridge University Press:  28 February 2011

Zou Yuanxi ,
Chou Yuanhsi ,
Mo Peigen ,
Yang Qianzhi ,
Min Huifang  and
Zhang Guicheng
Zou Yuanxi
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica
Chou Yuanhsi
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica
Mo Peigen
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica
Yang Qianzhi
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica
Min Huifang
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica
Zhang Guicheng
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica
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Abstract

Some recent data on minority carrier diffusion length MCDL in GaAs and certain optoelectric parameters of LEDs obtained by the authors as well as reported in the literature have been analysed to shed light on the probable configuration of certain deep levels in GaAs and related compounds. The practical implications of the results obtained are discussed from the view point of the mechanism of slow degradation of the related optoelectronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 385
Copyright
Copyright © Materials Research Society 1985

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References

[1] Miller, G.L., Lang, D.V. and Kimerling, L.C., Ann. Rev. of Material's Science (Ann. Rev. Inc., 1977), Vol.7, p.377.Google Scholar
[2] Peigen, Mo, J. Appl. Sci., (in Chinese) 3 (1985) 45.Google Scholar
[3] Mittonneau, A., Mircea, A., Martin, C.M. and Pons, D., Rev. Phys. Appl. 14 (1979) 853.CrossRefGoogle Scholar
[4] Partin, D.L., Chen, J.W., Milnes, A.G. and Vassamillet, L.F., J. Appl. Phys. 50 (1979) 6845.Google Scholar
[5] Kumar, V. and Ledebo, L-R., J. Appl. Phys. 52 (1981) 4866.CrossRefGoogle Scholar
[6] Casey, H.C. Jr, Miller, B.I. and Pinkas, E., J. Appl. Phys. 44 (1973) 1281.Google Scholar
[7] Partin, D.L., Milnes, A.G. and Vassamillet, L.F., J. Electron. Mater. 7 (1978) 279.CrossRefGoogle Scholar
[8] Qianzhi, Yang and Huifang, Min, unpublished.Google Scholar
[9] Lang, D.V. and Logan, R.A., J. Electron. Mater. 4 (1975) 1053.Google Scholar
[10] Yuanxi, Zou (Yuanhsi, Chou), Jicheng, Zhou, Peigen, Mo, Fengzhen, Lu, Liansheng, Li, Juan, Shao, Lei, Huang, Henghui, Sun and Chi, Sheng, 1983 Symp. on GaAs and Related Compounds 1982 (Inst. Phys. Ser. No.65) p. 49.Google Scholar
[11] Nelson, R.J. and Sobers, R.G., J. Appl. Phys. 49 (1978) 6103.Google Scholar
[12] Yijing, Shi, 1982 National Symp. on Semiconducting Compounds, Microwave Devices and Optoelectronic Devices, (Kunming, China), p.283.Google Scholar
[13] Guicheng, Zhang, Yungfu, Shao and Liangen, Gong, Luminescence and Display Devices, (in Chinese) 5 No.4 (1984) 65.Google Scholar
[14] Heinen, J. and Lauterbach, Ch., Siemens Forsch. Entwickl. Ber. 11 (1982) 209.Google Scholar
[15] Hammerling, H. and Huber, D., J. Electron. Mater. 6 (1977) 581.CrossRefGoogle Scholar
[16] Yuanxi, Zou (Yuanhsi, Chou), Acta Electronica, (in Chinese) No.1 (1980) 60.Google Scholar
[17] Dixon, R.W. and Hartman, R.L., J. Appl. Phys., 48 (1977) 3225.CrossRefGoogle Scholar
[18] Kondo, S., Isozvmi, S., Yamakoshi, S. and Kotani, T., 1982 Symp. on GaAs and Related Compounds 1981 (Inst. Phys. Ser. No.63) p.227.Google Scholar
[19] Kondo, S., Amano, T. and Nagai, H., J. Cryst. Growth 64 (1983) 433.Google Scholar