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Thermal Dependence of Quantum Dot Solar Cells

Published online by Cambridge University Press:  01 February 2011

Cory Cress ,
Seth M. Hubbard ,
Christopher Bailey ,
Ross Robinson ,
Brian J. Landi  and
Ryne P. Raffaelle
Cory Cress
Affiliation:
cory_cress@hotmail.com, Rochester Institute of Technology, Microsystems Engineering, 128 Autumn Chapel Way, Rochester, NY, 14624, United States
Seth M. Hubbard
Affiliation:
smhsps@rit.edu, Rochester Institute of Technology, NanoPower Research Laboratories, 85 Lomb Memorial Drive, Rochester, NY, 14623, United States
Christopher Bailey
Affiliation:
christopher.bailey@gmail.com, Rochester Institute of Technology, NanoPower Research Laboratories, 85 Lomb Memorial Drive, Rochester, NY, 14623, United States
Ross Robinson
Affiliation:
robinson.ross@gmail.com, Rochester Institute of Technology, NanoPower Research Laboratories, 85 Lomb Memorial Drive, Rochester, NY, 14623, United States
Brian J. Landi
Affiliation:
bjlsps@rit.edu, Rochester Institute of Technology, NanoPower Research Laboratories, 85 Lomb Memorial Drive, Rochester, NY, 14623, United States
Ryne P. Raffaelle
Affiliation:
rprsps@rit.edu, Rochester Institute of Technology, NanoPower Research Laboratories, 85 Lomb Memorial Drive, Rochester, NY, 14623, United States
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Abstract

Various temperature dependent optoelectronic properties were measured for GaAs-based p-type / intrinsic / n-type (pin) solar cell devices containing 5-layers of InAs quantum dots (QDs) grown with strain-compensation layers. Curve fitting of the dark diode characteristics allowed for the temperature dependence of the saturation current and the ideality parameter to be determined. The resulting parameter values indicate high material quality. Air mass zero illuminated current density vs. voltage measurements were used to determine the temperature coefficients of the open circuit voltage, short circuit current, maximum power, and fill factor. A strong correlation between the temperature dependent quantum dot electroluminescence peak emission wavelength and the sub-GaAs bandgap spectral response was observed.

Keywords

optoelectronicIII-Vnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1031: Symposium H – Nanostructured Solar Cells , 2007 , 1031-H13-19
Copyright
Copyright © Materials Research Society 2008

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