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Thermal Evolution of Rectifier Speed and Deep Levels in Irradiated Silicon

Published online by Cambridge University Press:  15 February 2011

E. Ntsoenzok ,
P. Desgardin ,
G. Blondiaux ,
D. C. Schmidt ,
J. F. Barbot ,
C. Blanchard  and
P. O. Renault
E. Ntsoenzok
Affiliation:
CERI-CNRS, 3A, rue de la Férollerie, 45071 Orléans, France
P. Desgardin
Affiliation:
CERI-CNRS, 3A, rue de la Férollerie, 45071 Orléans, France
G. Blondiaux
Affiliation:
CERI-CNRS, 3A, rue de la Férollerie, 45071 Orléans, France
D. C. Schmidt
Affiliation:
LMP, UMR 6630 CNRS, Faculté des sciences, 86960 Futuroscope Cedex, France
J. F. Barbot
Affiliation:
CERI-CNRS, 3A, rue de la Férollerie, 45071 Orléans, France
C. Blanchard
Affiliation:
LMP, UMR 6630 CNRS, Faculté des sciences, 86960 Futuroscope Cedex, France
P. O. Renault
Affiliation:
LMP, UMR 6630 CNRS, Faculté des sciences, 86960 Futuroscope Cedex, France
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Abstract

P+NN+ silicon rectifiers have been irradiated by protons and alpha particles. DLTS and reverse recovery time (the so called TRR) measurements were performed in both as-irradiated and annealed (400°C) samples. The evolution of implantation induced-centers with the annealing is not the same when using the two particles. For example, the concentration of the well known A center increases (decreases) with the annealing when protons (alpha particles) are used. On the other hand, the measurements of the TRR show that the rectifier speed decreases with the annealing in all cases studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 395
Copyright
Copyright © Materials Research Society 1997

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References

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