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Ti-Interlayer Mediated Epitaxy of CoSi2 with Ti Capping

Published online by Cambridge University Press:  15 February 2011

R. T. Tung  and
F. Schrey
R. T. Tung
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, N.J. 07974
F. Schrey
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, N.J. 07974
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Abstract

The growth of CoSi2 layers on Si(100) by Ti-interlayer mediated epitaxy (TIME) was studied. The use of a thin (1–3nm) Ti cap, the choice of an appropriate interlayer, and the removal of a metastable reaction by-product were found important for the fabrication of uniform CoSi2 layers. High quality, pinhole-free, single crystal [100]-oriented CoSi2 layers were fabricated. Multiply-oriented formation on heavily arsenic doped Si, void formation near oxide edges, and other salicide-related issues are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 173
Copyright
Copyright © Materials Research Society 1996

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