Hostname: page-component-848d4c4894-nr4z6 Total loading time: 0 Render date: 2024-06-13T01:25:23.889Z Has data issue: false hasContentIssue false
  • English
  • Français

The Volatile Component Loss and the Surface Morphology of the Gold-Palladium Metallizations to the Compound Semiconductor Structures

Published online by Cambridge University Press:  25 February 2011

L. Dobos ,
B. Kovács ,
I. Mojzes ,
V. Malina ,
B. Pécz  and
J. Karányi
L. Dobos
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, H-1325 Budapest P.O. Box 76, Hungary
B. Kovács
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, H-1325 Budapest P.O. Box 76, Hungary
I. Mojzes
Affiliation:
Technical University, Budapest, H-1521 Budapest Hungary
V. Malina
Affiliation:
Institute of Radio Engineering and Electronics of the Czechoslovak Academy of Sciences, Chaberska 57, 18251 Prague 8, CSFR
B. Pécz
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, H-1325 Budapest P.O. Box 76, Hungary
J. Karányi
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, H-1325 Budapest P.O. Box 76, Hungary
Get access

Abstract

Palladium based metal systems can be used to make ohmic contacts to AIIIBV compound semiconductors. A covering layer of gold is advantageous even from the point of view of bonding. Gold, palladium, Au/Pd layers were studied on InP and GaAs substrates. The samples were annealed in the vacuum chamber of the scanning electron microscope (SEM) and the volatile component losses (arsenic or phosphorus) were monitored by a quadrupole mass spectrometer. The changes of the surface morphology were studied using the SEM images. In the case of Pd/AIIIBV samples a single characteristic peak due to the interaction taking place between the palladium and the substrate was observed on the volatile component loss vs. temperature curve. In the case of Au/Pd/AIIIBv samples a second peak appeared on the evaporation vs. temperature curve due to the interaction between gold and AIIIBV substrate. The temperature of that second peak is about 50–60°C higher than in the case of a single gold layer on AIIIBV substrates because gold had to diffuse through the palladium layer, what hindered the reaction of gold with AIIIBV materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 641
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sharma, B. L., Semiconductors and Semimetals, Academic Prese, New York, 15, 1, (1981)CrossRefGoogle Scholar
2. Braslau, N., J. Vac. Sci. Technol., 19, 803, (1981)CrossRefGoogle Scholar
3. Kuan, T. S., Batson, P. E., Jackson, T. N., Rupprecht, H., Wilkie, E. L., J. Appl. Phys., 54, 6952, (1983)CrossRefGoogle Scholar
4. Liliental-Weber, Z., Gronsky, R., Washburn, J., Newman, N., Spicer, W. E., Weber, E. R., J. Vac. Sci. Technol. B, 4, 912, (1986)Google Scholar
5. Grinolds, H. R., Robinson, G. Y., Solid-State Electronics, 23, 973, (1980)Google Scholar
6. Oelhafen, P., Freeouf, J. L., Kuan, T. S., Jackson, T. N., Batson, P. E., J. Vac. Sci. Technol. B, 1, 588, (1983)Google Scholar
7. Lamouche, D., Martin, J. R., Clechet, P., Haroutiounian, G., Sandino, J. P., Solid- State Electronics, 29, 625, (1986)CrossRefGoogle Scholar
8. Sands, T., Keramidas, W. G., Yu, A. J., Gronsky, R., Washburn, J., Thin Solid Films, 136, 105, (1986)CrossRefGoogle Scholar
9. Allen, L. H., Hung, L. S., Kavanagh, K. L., Phillips, J. R., Yu, A. J., Mayer, J. W., Appl. Phys. Lett., 51, 326, (1987)CrossRefGoogle Scholar
10. Caron-Popowich, R., Washburn, J., Sands, T., Kaplan, A. S., J. Appl. Phys., 64, 4909, (1988)Google Scholar
11. Pécz, B., Veresegyhazy, R., Mojzes, I., Radnóczi, G., Sulyok, A., Malina, V., Mat. Res. Soc. Symp. Proc. lei, 319 (1990)Google Scholar
12. Sebestyén, T., Menyhárd, M., Szigethy, D., Electron. Lett., 12, 96, (1976)CrossRefGoogle Scholar
13. Mojzes, I., Sebestyén, T., Szigethy, D., Solid-State Electronics, 25, 449, (1982)Google Scholar
14. Mojzes, M., Veresegyhazy, R., Kovács, B., Gurbán, S., Pécz, B. and Radnóczi, G., Physical Problems in Microelectronics, Ed. by Kassabov, J., World Scientific, 214, (1985)Google Scholar
15. Malina, V., Sroubek, Z., Mojzes, I., Veresegyhazy, R., Pécz, B., Semicond. Sci. Techn., 2, 428, (1987)CrossRefGoogle Scholar
16. Barna, Á., Pécz, B., J. of Electron Microscopy Tech., 18, 325, (1991)Google Scholar