Hostname: page-component-848d4c4894-2pzkn Total loading time: 0 Render date: 2024-06-04T16:32:57.369Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface morphology and electrical property evolution of super-thin Pt film on 6H-SiC substrate during annealing

Published online by Cambridge University Press:  05 March 2012

Jingjing Yang ,
Wenxia Yuan  and
Xiaopeng Zeng
Jingjing Yang
Affiliation:
School of Applied Science, University of Science and Technology Beijing, Beijing 100083, PR China
Wenxia Yuan*
Affiliation:
School of Applied Science, University of Science and Technology Beijing, Beijing 100083, PR China
Xiaopeng Zeng
Affiliation:
School of Applied Science, University of Science and Technology Beijing, Beijing 100083, PR China
*
a)Author to whom correspondence should be addressed. Electronic mail: wxyuan@ustb.edu.cn
Get access Rights & Permissions [Opens in a new window]

Abstract

We reported the surface morphology and electrical property of super-thin Pt films, ∼2 nm thick, deposited on 6H-SiC (0001) substrates and subsequently annealed from 400 to 1000 °C. The surfaces of the films were found to have a feature of islands growth, and the sizes of the islands increased with increasing annealing temperature. Free carbon, produced by selective reactions between Pt and SiC, diffused toward the top surface across the product layers due to low solubility and composition gradient of carbon throughout the reaction zone. A dramatic change of electrical conductivity of the films was observed. A mechanism analysis reveals that the origin came from the contribution of aggregation of islands on the surface and formation of Pt silicides and a thin layer of crystalline graphite.

Keywords

Pt silicideSiCthin-film structuresurface morphologyelectrical property
Type
Technical Articles
Information
Powder Diffraction , Volume 26 , Issue 3 , September 2011 , pp. 256 - 261
Copyright
Copyright © Cambridge University Press 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Avrekh, M., Monteiro, O. R., and Brown, I. G. (2000). “Electrical resistivity of vacuum-arc-deposited platinum thin films,” Appl. Surf. Sci. 158, 217–222. 10.1016/S0169-4332(00)00021-0CrossRefGoogle Scholar
Baba, Y., Nagata, K., Takahashi, S., Nakamura, N., Yoshiyasu, N., Sakurai, M., Yamada, C., Ohtani, S., and Tona, M. (2005). “Surface modification on highly oriented pyrolytic graphite by slow highly charged ions,” Surf. Sci. 599, 248–254. 10.1016/j.susc.2005.10.016CrossRefGoogle Scholar
Bermudez, V. M. and Kaplan, R. (1990). “Investigation of the structure and stability of the Pt/SiC(001) interface,” J. Mater. Res. 5, 2882–2893. 10.1557/JMR.1990.2882CrossRefGoogle Scholar
Bourenane, K., Keffous, A., and Nezzal, G. (2007). “Electrical properties of Schottky diode Pt/SiC and Pt/porous SiC performed on highly resistif p-type 6H-SiC,” Vacuum 81, 663–668. 10.1016/j.vacuum.2006.09.009CrossRefGoogle Scholar
Burton, J. C., Sun, L., Long, F. H., Feng, Z. C., and Ferguson, I. T. (1999). “First-and second-order Raman scattering from semi-insulating 4H-SiC,” Phys. Rev. B 59, 7282–7284. 10.1103/PhysRevB.59.7282CrossRefGoogle Scholar
Chen, J. S., Kolawa, E., Nicolet, M.-A., Ruiz, R. P., Baud, L., Jaussaud, C., and Madar, R. (1994). “Solid-state reaction of Pt thin film with single-crystal (001) β-SiC,” J. Mater. Res. 9, 648–657. 10.1557/JMR.1994.0648CrossRefGoogle Scholar
Ferrari, A. C., Meyer, J. C., Scardaci, V., Casiraghi, C., Lazzeri, M., Mauri, F., Piscanec, S., Jiang, D., Novoselov, K. S., Roth, S., and Geim, A. K. (2006). “Raman spectrum of graphene and graphene layers,” Phys. Rev. Lett. 97, 1–4.CrossRefGoogle ScholarPubMed
Geim, A. K. and Novoselov, K. S. (2007). “The rise of graphene,” Nat. Mater. 6, 183–191. 10.1038/nmat1849CrossRefGoogle ScholarPubMed
Grosser, M. and Schmid, U. (2009). “The impact of sputter conditions on the microstructure and on the resistivity of tantalum thin films,” Thin Solid Films 517, 4493–4496. 10.1016/j.tsf.2008.12.009CrossRefGoogle Scholar
Grosser, M. and Schmid, U. (2010). “The impact of annealing temperature and time on the electrical performance of Ti/Pt thin films,” Appl. Surf. Sci. 256, 4564–4569. 10.1016/j.apsusc.2010.02.048CrossRefGoogle Scholar
Juang, Z. Y., Wu, C. Y., Lo, C. W., Chen, W. Y., Huang, C. F., Hwang, J. C., Chen, F. R., Leou, K. C., and Tsai, C. H. (2009). “Synthesis of graphene on silicon carbide substrates at low temperature,” Carbon 47, 2026–2031. 10.1016/j.carbon.2009.03.051CrossRefGoogle Scholar
Li, C., Yuan, W. X., Yang, J. J., and Li, D. D. (2011). “Preparation of single- and few-layer graphene sheets using Co-deposition on SiC substrate,” J. Nanomater. (submitted).CrossRefGoogle Scholar
Papanicolaou, N. A., Christou, A., and Gipe, M. L. (1989). “Pt and PtSix Schottky contacts on n-type β-SiC,” J. Appl. Phys. 65, 3526–3530. 10.1063/1.342626CrossRefGoogle Scholar
Pimenta, M. A., Dresselhaus, G., Dresselhaus, M. S., and Canc, L. G. (2007). “Studying disorder in graphite-based systems by Raman spectroscopy,” Phys. Chem. Chem. Phys. 9, 1276–1290. 10.1039/b613962kCrossRefGoogle ScholarPubMed
Porter, L. M. and Davis, R. F. (1995). “Chemistry, microstructure, and electrical properties at interfaces between thin films of platinum and alpha (6H) silicon carbide (0001),” J. Mater. Res. 10, 2336–2342. 10.1557/JMR.1995.2336CrossRefGoogle Scholar
Rijnders, M. R., Kodentsov, A. A., van Beek, J. A., van den Akker, J., and Van Loo, F. J. J. (1997). “Pattern formation in Pt-SiC diffusion couples,” Solid State Ionics 95, 51–59. 10.1016/S0167-2738(96)00578-4CrossRefGoogle Scholar
Schmid, U. and Seidel, H. (2008). “Effect of high temperature annealing on the electrical performance of titanium / platinum thin films,” Thin Solid Films 516, 898–906. 10.1016/j.tsf.2007.04.128CrossRefGoogle Scholar
Tsiaoussis, I., Frangis, N., Manolikas, C., and Tan, T. A. N. (2007). “The growth of Pd thin films on a 6H-SiC(0001) substrate,” J. Cryst. Growth 300, 368–373. 10.1016/j.jcrysgro.2006.12.036CrossRefGoogle Scholar
Veuillen, J. Y., Tan, T. A. N., Tsiaoussis, I., Frangis, N., Brunel, M., and Gunnella, R. (1999). “Reaction of palladium thin films with an Si-rich 6H-SiC(0001) (3 × 3) surface,” Diamond Relat. Mater. 8, 352–356. 10.1016/S0925-9635(98)00433-6CrossRefGoogle Scholar
Wesch, W. (1996). “Silicon carbide: synthesis and processing,” Nucl. Instrum. Meth. B. 116, 305–321. 10.1016/0168-583X(96)00065-1CrossRefGoogle Scholar
Xu, L. L., Wang, J., Liu, H. S., and Jin, Z. P. (2008). “Thermodynamic assessment of the Pt-Si binary system,” CALPHAD: Comput. Coupling Phase Diagrams Thermochem. 32, 101–105.CrossRefGoogle Scholar
Zhang, Z., Teng, J., Yuan, W. X., Zhang, F. F., and Chen, G. H. (2009). “Kinetic study of interfacial solid state reactions in the Ni/4H-SiC contact,” Appl. Surf. Sci. 255, 6939–6944. 10.1016/j.apsusc.2009.03.018CrossRefGoogle Scholar