Hostname: page-component-848d4c4894-wzw2p Total loading time: 0 Render date: 2024-05-29T11:27:01.240Z Has data issue: false hasContentIssue false
  • English
  • Français

Band structure and localization of electronic states of 2DEG in an inhomogeneous magnetic field

Published online by Cambridge University Press:  13 October 2014

Xiao Wei Zhang ,
Sun Yu Mou ,
Yu Liang Liu  and
Bo Dai
Xiao Wei Zhang*
Affiliation:
State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, P.R. China
Sun Yu Mou
Affiliation:
State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, P.R. China
Yu Liang Liu
Affiliation:
State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, P.R. China
Bo Dai
Affiliation:
State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, P.R. China
*
ae-mail: xwzhang1980@gmail.com
Get access

Abstract

Based on the finite-differences approach, we study the electronic properties of two-dimensional electron gas under an inhomogeneous magnetic field. Such structure can be realized by deposition of ferromagnetic strips on the surface of a semiconductor heterostructure. It is found that the system exhibits rich band structures. Many bound states are twofold degenerate for θ = π/2, which defines the magnetization direction in the ferromagnetic strips, while few degenerate state exist for θ = 0. Despite of this, there are three kinds of electronic states in our system: the extended, localized and intermediate ones, which is very different from the case of absence of magnetic field.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 68 , Issue 1 , October 2014 , 10201
Copyright
© EDP Sciences, 2014

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Prinz, G.A., Science 282, 1660 (1998)CrossRef
Wolf, D.D. et al., Science 294, 1488 (2001)CrossRef
Kubrak, V. et al., Physica E 7, 997 (2000)CrossRef
Dai, B. et al., Chin. Phys. Lett. 26, 037202-1 (2009)
Reijniers, J. et al., Europhys. Lett. 59, 749 (2002)CrossRef
Kato, M. et al., Phys. Rev. B 58, 4876 (1998)CrossRef
Ye, P.D. et al., Phys. Rev. Lett. 74, 3013 (1995)CrossRef
Matulis, A., Peeters, F.M., Phys. Rev. Lett. 72, 1518 (1994)CrossRef
Ibrahim, I.S., Peeters, F.M., Phys. Rev. B 52, 17321 (1995)CrossRef
Ibrahim, I.S., Peeters, F.M., Phys. Rev. B 62, 91 (2000)
Ibrahim, I.S., Peeters, F.M., Matulis, A., Phys. Rev. B 64, 245314 (2001)
Ibrahim, I.S., Schweigert, V.A., Peeters, F.M., Phys. Rev. B 56, 7508 (1997)CrossRef
Buchholz, D., Drouvelis, P.S., Schmelcher, P., Phys. Rev. B 73, 235346 (2006)CrossRef
Vančura, T. et al., Phys. Rev. B 62, 5074 (2000)CrossRef
Yao, M. et al., Superlattices Microstruct. 22, 135 (1997)
Kong, Y.H. et al., Solid State Commun. 142, 143 (2007)CrossRef
Zhang, X.W., Mou, S.Y., Dai, B., AIP Advances 3, 072105 (2013)CrossRef