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Optical characterization of bulk GaN silicon and magnesium doped: as grown, hydrogen implanted, and annealed
Published online by Cambridge University Press: 15 July 2004
Abstract
Two samples, GaN silicon-doped and GaN magnesium-doped, were hydrogen implanted and annealed. The low temperature photoluminescence and inelastic light scattering spectroscopy were employed to investigate structural changes as well as the changes in optical electronic transitions.
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- © EDP Sciences, 2004
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