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Rasmussen's Encephalitis in a 58-Year-Old Female: Still a Variant?
- Gary R. W. Hunter, Jeffrey Donat, William Pryse-Phillips, Sheri Harder, Christopher A. Robinson
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- Journal:
- Canadian Journal of Neurological Sciences / Volume 33 / Issue 3 / August 2006
- Published online by Cambridge University Press:
- 02 December 2014, pp. 302-305
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Background:
We report the case of a 58-year-old female with clinical, radiological, and histopathological evidence of Rasmussen's encephalitis, representing the oldest confirmed case to date.
Case Summary:The patient presented with complex partial seizures characterized by numbness of the left face and staring spells. These progressed to a state of epilepsia partialis continua with jerking of the left face, as well as severe cognitive impairment and loss of all communication. The patient responded well to Intravenous Immunoglobulin (IVIG) therapy despite early complications and with ongoing treatment is living independently with minimal cognitive impairment.
Conclusions:This represents the oldest confirmed case of Rasmussen's encephalitis and suggests that this diagnosis should be considered in patients of any age with an appropriate clinical picture. We recommend IVIG as a first line therapy for adult cases of Rasmussen's encephalitis.
Contributor affiliations
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- By Frank Andrasik, Melissa R. Andrews, Ana Inés Ansaldo, Evangelos G. Antzoulatos, Lianhua Bai, Ellen Barrett, Linamara Battistella, Nicolas Bayle, Michael S. Beattie, Peter J. Beek, Serafin Beer, Heinrich Binder, Claire Bindschaedler, Sarah Blanton, Tasia Bobish, Michael L. Boninger, Joseph F. Bonner, Chadwick B. Boulay, Vanessa S. Boyce, Anna-Katharine Brem, Jacqueline C. Bresnahan, Floor E. Buma, Mary Bartlett Bunge, John H. Byrne, Jeffrey R. Capadona, Stefano F. Cappa, Diana D. Cardenas, Leeanne M. Carey, S. Thomas Carmichael, Glauco A. P. Caurin, Pablo Celnik, Kimberly M. Christian, Stephanie Clarke, Leonardo G. Cohen, Adriana B. Conforto, Rory A. Cooper, Rosemarie Cooper, Steven C. Cramer, Armin Curt, Mark D’Esposito, Matthew B. Dalva, Gavriel David, Brandon Delia, Wenbin Deng, Volker Dietz, Bruce H. Dobkin, Marco Domeniconi, Edith Durand, Tracey Vause Earland, Georg Ebersbach, Jonathan J. Evans, James W. Fawcett, Uri Feintuch, Toby A. Ferguson, Marie T. Filbin, Diasinou Fioravante, Itzhak Fischer, Agnes Floel, Herta Flor, Karim Fouad, Richard S. J. Frackowiak, Peter H. Gorman, Thomas W. Gould, Jean-Michel Gracies, Amparo Gutierrez, Kurt Haas, C.D. Hall, Hans-Peter Hartung, Zhigang He, Jordan Hecker, Susan J. Herdman, Seth Herman, Leigh R. Hochberg, Ahmet Höke, Fay B. Horak, Jared C. Horvath, Richard L. Huganir, Friedhelm C. Hummel, Beata Jarosiewicz, Frances E. Jensen, Michael Jöbges, Larry M. Jordan, Jon H. Kaas, Andres M. Kanner, Noomi Katz, Matthew S. Kayser, Annmarie Kelleher, Gerd Kempermann, Timothy E. Kennedy, Jürg Kesselring, Fary Khan, Rachel Kizony, Jeffery D. Kocsis, Boudewijn J. Kollen, Hubertus Köller, John W. Krakauer, Hermano I. Krebs, Gert Kwakkel, Bradley Lang, Catherine E. Lang, Helmar C. Lehmann, Angelo C. Lepore, Glenn S. Le Prell, Mindy F. Levin, Joel M. Levine, David A. Low, Marilyn MacKay-Lyons, Jeffrey D. Macklis, Margaret Mak, Francine Malouin, William C. Mann, Paul D. Marasco, Christopher J. Mathias, Laura McClure, Jan Mehrholz, Lorne M. Mendell, Robert H. Miller, Carol Milligan, Beth Mineo, Simon W. Moore, Jennifer Morgan, Charbel E-H. Moussa, Martin Munz, Randolph J. Nudo, Joseph J. Pancrazio, Theresa Pape, Alvaro Pascual-Leone, Kristin M. Pearson-Fuhrhop, P. Hunter Peckham, Tamara L. Pelleshi, Catherine Verrier Piersol, Thomas Platz, Marcus Pohl, Dejan B. Popović, Andrew M. Poulos, Maulik Purohit, Hui-Xin Qi, Debbie Rand, Mahendra S. Rao, Josef P. Rauschecker, Aimee Reiss, Carol L. Richards, Keith M. Robinson, Melvyn Roerdink, John C. Rosenbek, Serge Rossignol, Edward S. Ruthazer, Arash Sahraie, Krishnankutty Sathian, Marc H. Schieber, Brian J. Schmidt, Michael E. Selzer, Mijail D. Serruya, Himanshu Sharma, Michael Shifman, Jerry Silver, Thomas Sinkjær, George M. Smith, Young-Jin Son, Tim Spencer, John D. Steeves, Oswald Steward, Sheela Stuart, Austin J. Sumner, Chin Lik Tan, Robert W. Teasell, Gareth Thomas, Aiko K. Thompson, Richard F. Thompson, Wesley J. Thompson, Erika Timar, Ceri T. Trevethan, Christopher Trimby, Gary R. Turner, Mark H. Tuszynski, Erna A. van Niekerk, Ricardo Viana, Difei Wang, Anthony B. Ward, Nick S. Ward, Stephen G. Waxman, Patrice L. Weiss, Jörg Wissel, Steven L. Wolf, Jonathan R. Wolpaw, Sharon Wood-Dauphinee, Ross D. Zafonte, Binhai Zheng, Richard D. Zorowitz
- Edited by Michael Selzer, Stephanie Clarke, Leonardo Cohen, Gert Kwakkel, Robert Miller, Case Western Reserve University, Ohio
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- Book:
- Textbook of Neural Repair and Rehabilitation
- Published online:
- 05 May 2014
- Print publication:
- 24 April 2014, pp ix-xvi
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- By Frank Andrasik, Melissa R. Andrews, Ana Inés Ansaldo, Evangelos G. Antzoulatos, Lianhua Bai, Ellen Barrett, Linamara Battistella, Nicolas Bayle, Michael S. Beattie, Peter J. Beek, Serafin Beer, Heinrich Binder, Claire Bindschaedler, Sarah Blanton, Tasia Bobish, Michael L. Boninger, Joseph F. Bonner, Chadwick B. Boulay, Vanessa S. Boyce, Anna-Katharine Brem, Jacqueline C. Bresnahan, Floor E. Buma, Mary Bartlett Bunge, John H. Byrne, Jeffrey R. Capadona, Stefano F. Cappa, Diana D. Cardenas, Leeanne M. Carey, S. Thomas Carmichael, Glauco A. P. Caurin, Pablo Celnik, Kimberly M. Christian, Stephanie Clarke, Leonardo G. Cohen, Adriana B. Conforto, Rory A. Cooper, Rosemarie Cooper, Steven C. Cramer, Armin Curt, Mark D’Esposito, Matthew B. Dalva, Gavriel David, Brandon Delia, Wenbin Deng, Volker Dietz, Bruce H. Dobkin, Marco Domeniconi, Edith Durand, Tracey Vause Earland, Georg Ebersbach, Jonathan J. Evans, James W. Fawcett, Uri Feintuch, Toby A. Ferguson, Marie T. Filbin, Diasinou Fioravante, Itzhak Fischer, Agnes Floel, Herta Flor, Karim Fouad, Richard S. J. Frackowiak, Peter H. Gorman, Thomas W. Gould, Jean-Michel Gracies, Amparo Gutierrez, Kurt Haas, C.D. Hall, Hans-Peter Hartung, Zhigang He, Jordan Hecker, Susan J. Herdman, Seth Herman, Leigh R. Hochberg, Ahmet Höke, Fay B. Horak, Jared C. Horvath, Richard L. Huganir, Friedhelm C. Hummel, Beata Jarosiewicz, Frances E. Jensen, Michael Jöbges, Larry M. Jordan, Jon H. Kaas, Andres M. Kanner, Noomi Katz, Matthew S. Kayser, Annmarie Kelleher, Gerd Kempermann, Timothy E. Kennedy, Jürg Kesselring, Fary Khan, Rachel Kizony, Jeffery D. Kocsis, Boudewijn J. Kollen, Hubertus Köller, John W. Krakauer, Hermano I. Krebs, Gert Kwakkel, Bradley Lang, Catherine E. Lang, Helmar C. Lehmann, Angelo C. Lepore, Glenn S. Le Prell, Mindy F. Levin, Joel M. Levine, David A. Low, Marilyn MacKay-Lyons, Jeffrey D. Macklis, Margaret Mak, Francine Malouin, William C. Mann, Paul D. Marasco, Christopher J. Mathias, Laura McClure, Jan Mehrholz, Lorne M. Mendell, Robert H. Miller, Carol Milligan, Beth Mineo, Simon W. Moore, Jennifer Morgan, Charbel E-H. Moussa, Martin Munz, Randolph J. Nudo, Joseph J. Pancrazio, Theresa Pape, Alvaro Pascual-Leone, Kristin M. Pearson-Fuhrhop, P. Hunter Peckham, Tamara L. Pelleshi, Catherine Verrier Piersol, Thomas Platz, Marcus Pohl, Dejan B. Popović, Andrew M. Poulos, Maulik Purohit, Hui-Xin Qi, Debbie Rand, Mahendra S. Rao, Josef P. Rauschecker, Aimee Reiss, Carol L. Richards, Keith M. Robinson, Melvyn Roerdink, John C. Rosenbek, Serge Rossignol, Edward S. Ruthazer, Arash Sahraie, Krishnankutty Sathian, Marc H. Schieber, Brian J. Schmidt, Michael E. Selzer, Mijail D. Serruya, Himanshu Sharma, Michael Shifman, Jerry Silver, Thomas Sinkjær, George M. Smith, Young-Jin Son, Tim Spencer, John D. Steeves, Oswald Steward, Sheela Stuart, Austin J. Sumner, Chin Lik Tan, Robert W. Teasell, Gareth Thomas, Aiko K. Thompson, Richard F. Thompson, Wesley J. Thompson, Erika Timar, Ceri T. Trevethan, Christopher Trimby, Gary R. Turner, Mark H. Tuszynski, Erna A. van Niekerk, Ricardo Viana, Difei Wang, Anthony B. Ward, Nick S. Ward, Stephen G. Waxman, Patrice L. Weiss, Jörg Wissel, Steven L. Wolf, Jonathan R. Wolpaw, Sharon Wood-Dauphinee, Ross D. Zafonte, Binhai Zheng, Richard D. Zorowitz
- Edited by Michael E. Selzer, Stephanie Clarke, Leonardo G. Cohen, Gert Kwakkel, Robert H. Miller, Case Western Reserve University, Ohio
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- Book:
- Textbook of Neural Repair and Rehabilitation
- Published online:
- 05 June 2014
- Print publication:
- 24 April 2014, pp ix-xvi
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Controlled Fabrication of Nanostructure Material Based Chemical Sensors
- Laura J Evans, Gary W. Hunter, Jennifer C. Xu, Gordon M. Berger, Randall L. Vander Wal
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1253 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1253-K08-04
- Print publication:
- 2010
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The use of nanotechnology based materials for chemical sensing has been of great interest since nanocrystalline materials have been shown to offer improved sensor sensitivity, stability, and response time. Several groups are successfully integrating nanostructures such as nanowires into operational sensors. The typical procedure may include random placement (e.g., dispersion, with fine-line patterning techniques used to create functional sensors) or time consuming precise fabrication (e.g., mechanical placement using an atomic force microscope or laser tweezer techniques). Dielectrophoresis has also been utilized, however it can be challenging to achieve good electrical contact of the nanostructures to the underlying electrodes. In this paper we report on a sensor platform that incorporates nanorods in a controlled, efficient, and effective manner. Semiconducting SnO2 nanorods are used as the sensing element for detection of hydrogen (H2) and propylene (C3H6) up to 600oC. Using a novel approach of combining dielectrophoresis with standard microfabrication processing techniques, we have achieved reproducible, time-efficient fabrication of gas sensors with reliable contacts to the SnO2 nanorods used for the detection of gases. The sensor layout is designed to assist in the alignment of the nanorods by selectively enhancing the electric field strength and allowing for the quick production of sensor arrays. The SnO2 nanorods are produced using a thermal evaporation-condensation approach. After growth, nanorods are separated from the resulting material using gravimetric separation. The rods vary in length from 3μm to greater than 10μm, with diameters ranging from 50 to 300nm. Dielectrophoresis is used to align multiple nanorods between electrodes. A second layer of metal is incorporated using standard microfabrication methods immediately after alignment to bury the ends of the rods making contact with the underlying electrodes within another layer of metal. Electrical contact was verified during testing by the response to H2 and C3H6 gases at a range of temperatures. Testing was performed on a stage with temperature control and probes were used for electrical contact. Gas flows into the testing chamber at a flow rate of 4000sccm. Sensor response of normalized current shift, |Igas-Iair|/Iair, was measured at a constant voltage bias. Sensors showed response to both H2 and C3H6. Detection of H2 was achieved at 100oC and response levels improved approximately 12000-fold at 600oC. Detection of C3H6 started at 100oC and improved approximately 10000-fold at 600oC. Detection of at least 200ppm for both gases was achieved at 600oC. Using this novel microfabrication approach, semiconducting SnO2 nanorods integrated into a microsensor platform have been demonstrated and sensing response showed dramatic increases at higher temperatures.
Contributors
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- By Claude Alain, Amy F. T. Arnsten, Lars Bäckman, Malcolm A. Binns, Sandra E. Black, S. Thomas Carmichael, Keith D. Cicerone, Maurizio Corbetta, Bruce Crosson, Jeffrey L. Cummings, Deirdre R. Dawson, Michael deRiesthal, Roger A. Dixon, Laura Eggermont, Kirk I. Erickson, Anthony Feinstein, Susan M. Fitzpatrick, Fu Qiang Gao, Douglas D. Garrett, Omar Ghaffar, Robbin Gibb, Elizabeth L. Glisky, Martha L. Glisky, Leslie J. Gonzalez Rothi, Cheryl L. Grady, Carol Greenwood, Gerri Hanten, Richard G. Hunter, Masud Husain, Narinder Kapur, Bryan Kolb, Arthur F. Kramer, Susan A. Leon, Harvey S. Levin, Brian Levine, Nadina Lincoln, Thomas W. McAllister, Edward McAuley, Bruce S. McEwen, David M. Morris, Stephen E. Nadeau, Roshan das Nair, Matthew Parrott, Jennie Ponsford, George P. Prigatano, Joel Ramirez, John M. Ringman, Ian H. Robertson, Amy D. Rodriguez, John C. Rosenbek, Bernhard Ross, Erik Scherder, Victoria Singh-Curry, Trudi Stickland, Donald T. Stuss, Edward Taub, Gary R. Turner, Harry V. Vinters, Samuel Weiss, John Whyte, Barbara A. Wilson, Gordon Winocur, J. Martin Wojtowicz
- Edited by Donald T. Stuss, University of Toronto, Gordon Winocur, University of Toronto, Ian H. Robertson, Trinity College, Dublin
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- Book:
- Cognitive Neurorehabilitation
- Published online:
- 05 September 2015
- Print publication:
- 11 September 2008, pp ix-xiv
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Temperature Dependent Dielectric Properties of Polycrystalline 96%Al2O3
- Liang-Yu Chen, Gary W. Hunter
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- Journal:
- MRS Online Proceedings Library Archive / Volume 833 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, G7.6
- Print publication:
- 2004
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Polycrystalline Al2O3 substrates have been proposed and tested for high temperature micro devices packaging intended for operation at temperatures up to 500°C. The dielectric properties of this material, including dielectric constant and effective volume conductivity, at elevated temperatures are of interest, especially for RF packaging applications. This article reports temperature dependent dielectric properties of polycrystalline 96% Al2O3 substrates from room temperature to 550°C measured by the AC impedance method at 120 Hz, 1 kHz, 10 kHz, 100 kHz, and 1 MHz. We observed negative temperature coefficients of volume electrical conductivity of 96% Al2O3 at 1 k, 10 k, and 100 kHz between room temperature and 50°C. The dielectric constant of the material increases significantly with temperature at frequencies below 10 kHz. The physical mechanisms of these dielectric behaviors of 96% Al2O3 at elevated temperatures are discussed.
Material System for Packaging 500°C SiC Microsystems
- Liang-Yu Chen, Robert S. Okojie, Philip G. Neudeck, Gary W. Hunter, Shun-Tien T. Lin
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- Journal:
- MRS Online Proceedings Library Archive / Volume 682 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, N4.3
- Print publication:
- 2001
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In order to establish a material system for packaging 500°C SiC microsystems, aluminum nitride (AlN) and aluminum oxide (Al2O3) were selected as packaging substrates, and gold (Au) thick-film materials were selected as substrate metallization material for electrical interconnection system (thick-film printed wires and thick-film metallization based wire-bond) and conductive die-attach interlayer. During a 1500-hour test in atmospheric oxygen with and without electrical bias, the electrical resistance of Au thick-film based interconnection system demonstrated low and stable electrical resistance at 500°C. The electrical interconnection system was also tested in extreme dynamic thermal environment. A silicon carbide (SiC) Schottky diode was attached to ceramic substrate using Au thick-film material as the conductive bonding layer and was successfully tested at 500°C in air for more than 1000 hours. In addition to the electrical test of die-attach in static thermal environments, nonlinear finite element analysis (FEA) was used for thermal mechanical evaluation and optimization of the die-attach in a wide temperature range.
Looking Backward, Looking Forward: MLA Members Speak
- April Alliston, Elizabeth Ammons, Jean Arnold, Nina Baym, Sandra L. Beckett, Peter G. Beidler, Roger A. Berger, Sandra Bermann, J.J. Wilson, Troy Boone, Alison Booth, Wayne C. Booth, James Phelan, Marie Borroff, Ihab Hassan, Ulrich Weisstein, Zack Bowen, Jill Campbell, Dan Campion, Jay Caplan, Maurice Charney, Beverly Lyon Clark, Robert A. Colby, Thomas C. Coleman III, Nicole Cooley, Richard Dellamora, Morris Dickstein, Terrell Dixon, Emory Elliott, Caryl Emerson, Ann W. Engar, Lars Engle, Kai Hammermeister, N. N. Feltes, Mary Anne Ferguson, Annie Finch, Shelley Fisher Fishkin, Jerry Aline Flieger, Norman Friedman, Rosemarie Garland-Thomson, Sandra M. Gilbert, Laurie Grobman, George Guida, Liselotte Gumpel, R. K. Gupta, Florence Howe, Cathy L. Jrade, Richard A. Kaye, Calhoun Winton, Murray Krieger, Robert Langbaum, Richard A. Lanham, Marilee Lindemann, Paul Michael Lützeler, Thomas J. Lynn, Juliet Flower MacCannell, Michelle A. Massé, Irving Massey, Georges May, Christian W. Hallstein, Gita May, Lucy McDiarmid, Ellen Messer-Davidow, Koritha Mitchell, Robin Smiles, Kenyatta Albeny, George Monteiro, Joel Myerson, Alan Nadel, Ashton Nichols, Jeffrey Nishimura, Neal Oxenhandler, David Palumbo-Liu, Vincent P. Pecora, David Porter, Nancy Potter, Ronald C. Rosbottom, Elias L. Rivers, Gerhard F. Strasser, J. L. Styan, Marianna De Marco Torgovnick, Gary Totten, David van Leer, Asha Varadharajan, Orrin N. C. Wang, Sharon Willis, Louise E. Wright, Donald A. Yates, Takayuki Yokota-Murakami, Richard E. Zeikowitz, Angelika Bammer, Dale Bauer, Karl Beckson, Betsy A. Bowen, Stacey Donohue, Sheila Emerson, Gwendolyn Audrey Foster, Jay L. Halio, Karl Kroeber, Terence Hawkes, William B. Hunter, Mary Jambus, Willard F. King, Nancy K. Miller, Jody Norton, Ann Pellegrini, S. P. Rosenbaum, Lorie Roth, Robert Scholes, Joanne Shattock, Rosemary T. VanArsdel, Alfred Bendixen, Alarma Kathleen Brown, Michael J. Kiskis, Debra A. Castillo, Rey Chow, John F. Crossen, Robert F. Fleissner, Regenia Gagnier, Nicholas Howe, M. Thomas Inge, Frank Mehring, Hyungji Park, Jahan Ramazani, Kenneth M. Roemer, Deborah D. Rogers, A. LaVonne Brown Ruoff, Regina M. Schwartz, John T. Shawcross, Brenda R. Silver, Andrew von Hendy, Virginia Wright Wexman, Britta Zangen, A. Owen Aldridge, Paula R. Backscheider, Roland Bartel, E. M. Forster, Milton Birnbaum, Jonathan Bishop, Crystal Downing, Frank H. Ellis, Roberto Forns-Broggi, James R. Giles, Mary E. Giles, Susan Blair Green, Madelyn Gutwirth, Constance B. Hieatt, Titi Adepitan, Edgar C. Knowlton, Jr., Emanuel Mussman, Sally Todd Nelson, Robert O. Preyer, David Diego Rodriguez, Guy Stern, James Thorpe, Robert J. Wilson, Rebecca S. Beal, Joyce Simutis, Betsy Bowden, Sara Cooper, Wheeler Winston Dixon, Tarek el Ariss, Richard Jewell, John W. Kronik, Wendy Martin, Stuart Y. McDougal, Hugo Méndez-Ramírez, Ivy Schweitzer, Armand E. Singer, G. Thomas Tanselle, Tom Bishop, Mary Ann Caws, Marcel Gutwirth, Christophe Ippolito, Lawrence D. Kritzman, James Longenbach, Tim McCracken, Wolfe S. Molitor, Diane Quantic, Gregory Rabassa, Ellen M. Tsagaris, Anthony C. Yu, Betty Jean Craige, Wendell V. Harris, J. Hillis Miller, Jesse G. Swan, Helene Zimmer-Loew, Peter Berek, James Chandler, Hanna K. Charney, Philip Cohen, Judith Fetterley, Herbert Lindenberger, Julia Reinhard Lupton, Maximillian E. Novak, Richard Ohmann, Marjorie Perloff, Mark Reynolds, James Sledd, Harriet Turner, Marie Umeh, Flavia Aloya, Regina Barreca, Konrad Bieber, Ellis Hanson, William J. Hyde, Holly A. Laird, David Leverenz, Allen Michie, J. Wesley Miller, Marvin Rosenberg, Daniel R. Schwarz, Elizabeth Welt Trahan, Jean Fagan Yellin
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- Journal:
- PMLA / Publications of the Modern Language Association of America / Volume 115 / Issue 7 / December 2000
- Published online by Cambridge University Press:
- 23 October 2020, pp. 1986-2078
- Print publication:
- December 2000
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Silicon Carbide Die Attach Scheme for 500°C Operation
- Liang-Yu Chen, Gary W. Hunter, Philip G. Neudeck
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T8.10.1
- Print publication:
- 2000
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Single crystal silicon carbide (SiC) has such excellent physical, chemical, and electronic properties that SiC based semiconductor electronics can operate at temperatures in excess of 600°C well beyond the high temperature limit for Si based semiconductor devices. SiC semiconductor devices have been demonstrated to be operable at temperatures as high as 600°C, but only in a probe-station environment partially because suitable packaging technology for high temperature (500°C and beyond) devices is still in development. One of the core technologies necessary for high temperature electronic packaging is semiconductor die-attach with low and stable electrical resistance. This paper discusses a low resistance die-attach method and the results of testing carried out at both room temperature and 500°C in air. A 1 mm2 SiC Schottky diode die was attached to aluminum nitride (AlN) and 96% pure alumina ceramic substrates using precious metal based thick-film material. The attached test die using this scheme survived both electronically and mechanically performance and stability tests at 500°C in oxidizing environment of air for 550 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward I-V curves of an attached diode before and during heat treatment indicated stable and low attach-resistance at both room-temperature and 500°C over the entire 550 hours test period. The future durability tests are also discussed.
Surface And Interface Study Of Pdcr/Sic Schottky Diode Gas Sensor Annealed At 425°C
- Liang-Yu Chen, Gary W. Hunter, Philip G. Neudeck, Dak Knight
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- Journal:
- MRS Online Proceedings Library Archive / Volume 483 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 259
- Print publication:
- 1997
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The surface and interface properties of a Pd0.9Cr0.1/SiC Schottky diode gas sensor both before and after annealing are investigated using Auger electron spectroscopy (AES), scanning electron spectroscopy (SEM), and energy dispersive spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed PdxSi only in a very narrow interfacial region. After annealing for 250 hours at 425 °C, the surface of Schottky contact area has much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. PdxSi formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to deep interface region. A stable catalytic surface and a clean layer of Pd0.9Cr0.1 film are likely responsible for significantly improved device sensitivity.