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An Analysis of Static and Dynamic Characteristics of 12kV 4H-SiC n-IGBT using HfO2-SiO2 Dielectric Stack at High Temperatures
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- Journal:
- MRS Advances / Volume 3 / Issue 59 / 2018
- Published online by Cambridge University Press:
- 03 May 2018, pp. 3433-3438
- Print publication:
- 2018
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- Article
- Export citation